Parametric results for: ds1225y. under SRAMs

All Filters Access Time-Max Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (3)

150 ns 8 170 ns 7 200 ns 10

Min (ns) - Max (ns)

29 hits Apply

10 YEAR DATA RETENTION 13 10 YEAR DATA RETENTION PERIOD 2 BATTERY BACK-UP 4

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R-PDIP-P28 1 R-PDIP-T28 10 R-XDIP-P28 1 R-XDMA-P28 13

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e0 16 e3 5

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38.225 mm 1 38.227 mm 2 38.862 mm 2 38.865 mm 6

Min (mm) - Max (mm)

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Manufacturer (3)

Dallas Semiconductor 13 Maxim Integrated Products 13 Rochester Electronics LLC 3

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Memory Density (2)

16.384 kbit 1 65.536 kbit 24

Min (bit) - Max (bit)

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NON-VOLATILE SRAM MODULE 25

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Memory Width (1)

8 25

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1 5 NOT SPECIFIED 1

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1.0 25

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1 3

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28 25

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2.048 k 1 8.192 k 24

Min (words) - Max (words)

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2000.0 1 8000.0 24

Min - Max

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ASYNCHRONOUS 25

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70.0 °C 14 85.0 °C 11

Min (°C) - Max (°C)

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-40.0 °C 11 0.0 °C 14

Min (°C) - Max (°C)

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Organization (2)

2KX8 1 8KX8 24

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3-STATE 1

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YES 3

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PLASTIC/EPOXY 11 UNSPECIFIED 14

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DIP 20

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DIP28,.6 15

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RECTANGULAR 25

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IN-LINE 12 MICROELECTRONIC ASSEMBLY 13

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Supply Voltage-Nom (Vsup) (1)

5 V 25

29 hits Apply