Parametric results for: fbg20n18bsh under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

HIGH RELIABILITY 1

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DRAIN SOURCE 1

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Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

200 V 1

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Drain Current-Max (ID) (1)

18 A 1

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Drain-source On Resistance-Max (1)

28 mΩ 1

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HIGH ELECTRON MOBILITY 1

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13 pF 1

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R-XBCC-N4 1

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Manufacturer (1)

Micross Components 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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DEPLETION MODE 1

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150.0 °C 1

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-55.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

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CHIP CARRIER 1

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Active 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

1 hit Apply