Manufacturer | Description | Price Range | Set Alert | Details |
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EPC Space LLC | GAN FET HEMT 200V 18A 4FSMD-B | $365.4800 |
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Micross Components | Power Field-Effect Transistor, 18A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET, |
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