Parametric results for: fdb6676 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

310.0 mJ 4 370.0 mJ 5

Min (mJ) - Max (mJ)

9 hits Apply

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

30 V 9

9 hits Apply

Drain Current-Max (ID) (2)

75 A 5 76 A 4

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (2)

6 mΩ 5 6.5 mΩ 4

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-263AB 9

9 hits Apply

R-PSSO-G2 9

9 hits Apply

e0 2

9 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 8 Rochester Electronics LLC 1

9 hits Apply

1 2

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

2 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 4 175.0 °C 4

Min (°C) - Max (°C)

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

SMALL OUTLINE 9

9 hits Apply

Active 1 Obsolete 8

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

70 W 1 93 W 1

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply