Parametric results for: hufa76409d3s under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW RESISTANCE 1

8 hits Apply

DRAIN 7

8 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 7

8 hits Apply

DS Breakdown Voltage-Min (1)

60 V 7

8 hits Apply

Drain Current-Max (ID) (1)

18 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

75 mΩ 7

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-252AA 7

8 hits Apply

R-PSSO-G2 7

8 hits Apply

e3 6

8 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 3 Intersil Corporation 2 onsemi 1 Rochester Electronics LLC 2

8 hits Apply

1 5 NOT APPLICABLE 1

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

2 7

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

175.0 °C 4

8 hits Apply

-55.0 °C 1

8 hits Apply

PLASTIC/EPOXY 7

8 hits Apply

RECTANGULAR 7

8 hits Apply

SMALL OUTLINE 7

8 hits Apply

Active 2 Obsolete 3 Transferred 3

8 hits Apply

Yes 4

8 hits Apply

260 4 NOT APPLICABLE 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

49 W 4

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply