Parametric results for: hyb-1 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (2)

FOUR BANK PAGE BURST 452 MULTI BANK PAGE BURST 277

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Access Time-Max (25)

200 ps 2 210 ps 4 220 ps 10 250 ps 11 280 ps 7 350 ps 31 400 ps 156 450 ps 219 500 ps 137 550 ps 8 600 ps 112 650 ps 12 700 ps 8 750 ps 2 800 ps 6 900 ps 2 5 ns 2 5.4 ns 17 5.5 ns 7 6 ns 9 6.5 ns 9 7 ns 1 20 ns 2 24 ns 2 30 ns 2

Min (ns) - Max (ns)

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AUTO REFRESH 15 AUTO/SELF REFRESH 714

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Clock Frequency-Max (fCLK) (23)

83 MHz 4 100 MHz 1 133 MHz 25 166 MHz 6 200 MHz 91 250 MHz 2 266 MHz 93 267 MHz 19 300 MHz 5 333 MHz 160 350 MHz 3 400 MHz 145 450 MHz 3 500 MHz 7 533 MHz 23 550 MHz 1 600 MHz 4 700 MHz 5 800 MHz 3 833 MHz 1 900 MHz 3 1 GHz 3 1.2 GHz 1

Min (MHz) - Max (MHz)

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COMMON 608

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1,2,4,8 18 2,4,8,16 18 4,8 555

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R-PBGA-B136 39 R-PBGA-B144 15 R-PBGA-B54 15 R-PBGA-B60 315 R-PBGA-B63 26 R-PBGA-B68 80 R-PBGA-B71 20 R-PBGA-B84 228 R-PBGA-B90 10 R-PBGA-B92 26 R-XDMA-N240 1 S-PBGA-B144 8 S-PBGA-B54 2 S-PBGA-B60 3

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e0 19 e1 55

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10.5 mm 200 11 mm 14 12 mm 15 12.5 mm 254 13 mm 37 13.5 mm 16 14 mm 35 17 mm 70 18.5 mm 15 20 mm 53 21.8 mm 20

Min (mm) - Max (mm)

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Manufacturer (2)

Infineon Technologies AG 195 Qimonda AG 612

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Memory Density (8)

262.144 kbit 1 134.2177 Mbit 6 268.4355 Mbit 203 301.9899 Mbit 9 536.8709 Mbit 256 1.0737 Gbit 255 2.1475 Gbit 46 4.295 Gbit 12

Min (bit) - Max (bit)

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DDR DRAM 146 DDR1 DRAM 42 DDR2 DRAM 528 DDR3 DRAM 4 GDDR2 DRAM 4 GDDR3 DRAM 5 SYNCHRONOUS DRAM 21 SYNCHRONOUS GRAPHICS RAM 28 SYNCHRONOUS GRAPHICS RAM MODULE 10

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Memory Width (7)

4 185 8 245 9 3 16 290 18 3 32 59 36 3

Min - Max

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1 13 3 261

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1.0 729

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1 729

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136 40 144 23 54 17 60 318 63 26 68 80 71 20 84 228 90 10 92 26

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8.192 k 1 8.3886 M 38 16.7772 M 111 33.5544 M 160 67.1089 M 215 134.2177 M 143 268.4355 M 84 536.8709 M 30 1.0737 G 6

Min (words) - Max (words)

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8000.0 1 8000000.0 38 1.6E7 111 3.2E7 160 6.4E7 215 1.28E8 143 2.56E8 84 5.12E8 30 1.0E9 6

Min - Max

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SYNCHRONOUS 729

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70.0 °C 135 85.0 °C 221 95.0 °C 198

Min (°C) - Max (°C)

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-40.0 °C 9 -25.0 °C 1 0.0 °C 544

Min (°C) - Max (°C)

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Organization (21)

128MX4 54 128MX8 89 16MX16 85 16MX18 3 16MX32 23 1GX4 6 256MX4 62 256MX8 22 32MX16 101 32MX32 6 32MX8 50 32MX9 3 512MX4 24 512MX8 6 64MX16 98 64MX4 39 64MX8 78 8KX32 1 8MX16 6 8MX32 29 8MX36 3

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3-STATE 606

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PLASTIC/EPOXY 788

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FBGA 130 LFBGA 42 TBGA 15 TFBGA 592 VFBGA 9

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BGA136,12X17,32 22 BGA144,12X18,40/32 6 BGA54,9X9,32 15 BGA60,9X10,32 14 BGA60,9X11,32 254 BGA63,9X11,32 15 BGA68,9X19,32 59 BGA71,9X19,32 20 BGA84,9X15,32 184 BGA84,9X19,32 5 BGA90,9X15,32 7 BGA92,9X21,32 7

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RECTANGULAR 775 SQUARE 13

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GRID ARRAY 3 GRID ARRAY, FINE PITCH 130 GRID ARRAY, LOW PROFILE, FINE PITCH 42 GRID ARRAY, THIN PROFILE 15 GRID ARRAY, THIN PROFILE, FINE PITCH 588 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 9 MICROELECTRONIC ASSEMBLY 1

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Refresh Cycles (2)

4096 15 8192 587

Min - Max

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Supply Voltage-Nom (Vsup) (3)

1.5 V 21 1.8 V 729 2 V 38

Min (V) - Max (V)

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