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IDT6116LA70L28
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 80 µA | CMOS | COMMERCIAL | S-XQCC-N28 | Not Qualified | e0 | 70 °C | 28 | CERAMIC | QCCN | LCC28,.45SQ | SQUARE | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||||
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IDT6116LA70FB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 90 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDFP-F24 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 24 | CERAMIC, METAL-SEALED COFIRED | DFP | FL24,.4 | RECTANGULAR | FLATPACK | YES | TIN LEAD | FLAT | 1.27 mm | DUAL | 2.286 mm | 9.9 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | DFP | FP-24 | 24 | ||||
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IDT6116LA70L32
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 80 µA | CMOS | COMMERCIAL | R-XQCC-N32 | Not Qualified | e0 | 70 °C | 32 | CERAMIC | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||||
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IDT6116LA70TD
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 80 µA | CMOS | COMMERCIAL | R-XDIP-T24 | Not Qualified | e0 | 70 °C | 24 | CERAMIC | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||||
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IDT6116LA70L32B
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 90 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | QFJ | LCC-32 | 32 | ||||
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IDT6116LA70TP
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 80 µA | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e0 | 70 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn85Pb15) | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||||||
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IDT6116LA70TDB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 90 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.004 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | DIP | DIP, DIP24,.3 | 24 | 1988-01-01 | ||
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IDT6116LA70P
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 80 µA | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e0 | 70 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn85Pb15) | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||||
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IDT6116LA70DB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 90 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 32.004 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | DIP | DIP, DIP24,.6 | 24 | 1986-09-17 | ||
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IDT6116LA70DGB
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | STANDARD SRAM | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | e3 | 125 °C | -55 °C | MIL-STD-883 Class B | 24 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 32.004 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | 3A001.A.2.C | 8542.32.00.41 | DIP | 0.600 INCH, CERAMIC, DIP-24 | 24 |