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IDT71256S35TP
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 4.5 V | 155 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn85Pb15) | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 34.67 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, PLASTIC, DIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.41 | ||||||||
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IDT71256S35YG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J28 | Not Qualified | e3 | 70 °C | 28 | PLASTIC/EPOXY | SOJ | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.9324 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOJ | 0.300 INCH, SOJ-28 | 28 | compliant | EAR99 | 8542.32.00.41 | ||||||||||||
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IDT71256S35L28BG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N28 | Not Qualified | e3 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 8.89 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | LCC-28 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
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IDT71256S35L32B
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 165 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 32 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||||||
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IDT71256S35L32
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 4.5 V | 155 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CQCC-N32 | Not Qualified | e0 | 70 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 32 | not_compliant | EAR99 | 8542.32.00.41 | |||||||
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IDT71256S35XEB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 165 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDFP-F28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DFP | FL28,.4 | RECTANGULAR | FLATPACK | YES | Tin/Lead (Sn/Pb) | FLAT | 1.27 mm | DUAL | 2.286 mm | 18.288 mm | 9.144 mm | INTEGRATED DEVICE TECHNOLOGY INC | DFP | CERPACK-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||||||
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IDT71256S35L28B8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 8.89 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | QCCN, | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
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IDT71256S35L28
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 4.5 V | 155 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CQCC-N28 | Not Qualified | e0 | 70 °C | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 8.89 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | LCC-28 | 28 | not_compliant | EAR99 | 8542.32.00.41 | |||||||
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IDT71256S35J
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 4.5 V | 155 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e0 | 1 | 70 °C | 225 | 20 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | PLASTIC, LCC-32 | 32 | not_compliant | EAR99 | 8542.32.00.41 | |||||
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IDT71256S35L28B
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 165 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 8.89 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | LCC-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 |