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IDT71V3557S85BG8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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IDT71V3557S85BGI8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 235 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | ||
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IDT71V3557S85BGG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT71V3557S85BGI
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 235 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | ||
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IDT71V3557S85BG
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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IDT71V3557S85BGGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 235 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 |