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EPCQ16ASI8N
Intel Corporation
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$10.9687 Buy | Yes | Active | 16.7772 Mbit | 1 | 16MX1 | 3.3 V | 100 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3.3 V | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | SOP, | Compliant | 3A991 | 8542.32.00.51 | ||||||||||||||||||||
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EPC2LC20N
Intel Corporation
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$41.5100 Buy | Yes | Obsolete | 1.6957 Mbit | 1 | 1695680X1 | 3.3 V | CONFIGURATION MEMORY | IT ALSO REQUIRES 5V NOMINAL SUPPLY | 1 | 1695680 | 1.6957 M | SYNCHRONOUS | 3-STATE | SERIAL | 3.3 V | 100 µA | 50 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PQCC-J20 | Not Qualified | e3 | 3 | 70 °C | 245 | 30 | 20 | PLASTIC/EPOXY | QCCJ | LCC20,.39SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 8.9662 mm | 8.9662 mm | LCC-20 | Compliant | EAR99 | 8542.32.00.61 | |||||||||||||||||||||
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GT28F640W30T85
Intel Corporation
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Check for Price Buy | Transferred | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | FLASH | SRAM IS CONFIGURED AS 512K X 16 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 1.8 V | 1.9 V | 1.7 V | OTHER | R-PBGA-B56 | Not Qualified | 85 °C | -25 °C | 56 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | VFBGA, | Unknown | EAR99 | 8542.32.00.51 | BGA | 56 | ||||||||||||||||||||||||||||||
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GT28F320W18B90
Intel Corporation
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Check for Price Buy | No | Obsolete | 33.5544 Mbit | 16 | 4K,32K | 2MX16 | 1.8 V | 90 ns | FLASH | BOTTOM | YES | YES | NO | 8,63 | 2000000 | 2.0972 M | 4 words | PARALLEL | 5 µA | 40 µA | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | e0 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | FBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 750 µm | BOTTOM | FBGA, BGA56,7X8,30 | Unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||||||||
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TE28F002BX-T80
Intel Corporation
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Check for Price Buy | Obsolete | 2.0972 Mbit | 8 | 16K,8K,96K,128K | 256KX8 | 5 V | 80 ns | FLASH | BOTTOM BOOT BLOCK | TOP | YES | NO | 100000 Write/Erase Cycles | 1 | 1,2,1,1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 20 µA | 70 µA | 5.25 V | 4.75 V | MOS | INDUSTRIAL | NO | NOR TYPE | R-PDSO-N40 | Not Qualified | 85 °C | -40 °C | 40 | PLASTIC/EPOXY | SON | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE | YES | NO LEAD | 500 µm | DUAL | 1.2 mm | 18.4 mm | 10 mm | SON, TSSOP40,.8,20 | Unknown | EAR99 | 8542.32.00.51 | TSOP | 40 | |||||||||||||||
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PH28F640W18BE60
Intel Corporation
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Check for Price Buy | Yes | Transferred | 67.1089 Mbit | 16 | 4K,32K | 4MX16 | 1.8 V | 60 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | BOTTOM | YES | YES | NO | 1 | 8,127 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4 words | PARALLEL | 1.8 V | 5 µA | 40 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | e1 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | VFBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | VFBGA, BGA56,7X8,30 | Compliant | EAR99 | 8542.32.00.51 | BGA | 56 | ||||||||||||
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E28F800B5T90
Intel Corporation
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Check for Price Buy | No | Obsolete | 8.3886 Mbit | 8 | 16K,8K,96K,128K | 1MX8 | 5 V | 90 ns | FLASH | CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK | 8 | TOP | YES | NO | 100000 Write/Erase Cycles | 1 | 1,2,1,7 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 5 V | 8 µA | 70 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PDSO-G48 | Not Qualified | e0 | 70 °C | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | 12 X 20 MM, TSOP-48 | Unknown | EAR99 | 8542.32.00.51 | TSOP | 48 | |||||||||||||
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TE28F160B3B110
Intel Corporation
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Check for Price Buy | Obsolete | 16.7772 Mbit | 16 | 4K,32K | 1MX16 | 3 V | 110 ns | FLASH | USER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK | BOTTOM | YES | NO | 1 | 8,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 2.7 V | 5 µA | 35 µA | 3.6 V | 2.7 V | MOS | INDUSTRIAL | NO | NOR TYPE | R-PDSO-G48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | 12 X 20 MM, TSOP-48 | Unknown | EAR99 | 8542.32.00.51 | TSOP | 48 | |||||||||||||||||
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5962-9089903MXA
Intel Corporation
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Check for Price Buy | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 150 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | MILITARY | NO | NOR TYPE | R-GDIP-T32 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 32 | CERAMIC, GLASS-SEALED | WDIP | DIP32,.6 | RECTANGULAR | IN-LINE, WINDOW | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 42.165 mm | 15.24 mm | WDIP, DIP32,.6 | Unknown | 3A001.a.2.c | 8542.32.00.51 | DIP | 32 | ||||||||||||||
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PF58F0031M0Y1BE
Intel Corporation
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Check for Price Buy | Yes | Transferred | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 108 MHz | FLASH | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | PARALLEL | 1.8 V | 2 V | 1.7 V | CMOS | MLC NAND TYPE | R-PBGA-B105 | Not Qualified | e1 | 3 | 260 | 40 | 105 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 15 mm | 11 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.51 | BGA | 105 |