Parametric results for: intel strataflash memory ... under Flash Memories

Filter Your Search

1 - 10 of 2,429 results

All Filters
|
-
-
-
-
-
-
-
-
-
-
-
-
Manufacturer: Intel Corporation
Select parts from the table below to compare.
Compare
Compare
EPCQ16ASI8N
Intel Corporation
$10.9687 Buy Yes Active 16.7772 Mbit 1 16MX1 3.3 V 100 MHz FLASH 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3.3 V 50 µA 15 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PDSO-G8 e3 3 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) - annealed GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm SOP, Compliant 3A991 8542.32.00.51
EPC2LC20N
Intel Corporation
$41.5100 Buy Yes Obsolete 1.6957 Mbit 1 1695680X1 3.3 V CONFIGURATION MEMORY IT ALSO REQUIRES 5V NOMINAL SUPPLY 1 1695680 1.6957 M SYNCHRONOUS 3-STATE SERIAL 3.3 V 100 µA 50 µA 3.6 V 3 V CMOS COMMERCIAL S-PQCC-J20 Not Qualified e3 3 70 °C 245 30 20 PLASTIC/EPOXY QCCJ LCC20,.39SQ SQUARE CHIP CARRIER YES MATTE TIN J BEND 1.27 mm QUAD 4.572 mm 8.9662 mm 8.9662 mm LCC-20 Compliant EAR99 8542.32.00.61
package
GT28F640W30T85
Intel Corporation
Check for Price Buy Transferred 67.1089 Mbit 16 4MX16 1.8 V FLASH SRAM IS CONFIGURED AS 512K X 16 1 4000000 4.1943 M SYNCHRONOUS 1.8 V 1.9 V 1.7 V OTHER R-PBGA-B56 Not Qualified 85 °C -25 °C 56 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 750 µm BOTTOM 1 mm 9 mm 7.7 mm VFBGA, Unknown EAR99 8542.32.00.51 BGA 56
GT28F320W18B90
Intel Corporation
Check for Price Buy No Obsolete 33.5544 Mbit 16 4K,32K 2MX16 1.8 V 90 ns FLASH BOTTOM YES YES NO 8,63 2000000 2.0972 M 4 words PARALLEL 5 µA 40 µA CMOS INDUSTRIAL NO NOR TYPE R-PBGA-B56 Not Qualified e0 85 °C -40 °C 56 PLASTIC/EPOXY FBGA BGA56,7X8,30 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 750 µm BOTTOM FBGA, BGA56,7X8,30 Unknown EAR99 8542.32.00.51
package
TE28F002BX-T80
Intel Corporation
Check for Price Buy Obsolete 2.0972 Mbit 8 16K,8K,96K,128K 256KX8 5 V 80 ns FLASH BOTTOM BOOT BLOCK TOP YES NO 100000 Write/Erase Cycles 1 1,2,1,1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 20 µA 70 µA 5.25 V 4.75 V MOS INDUSTRIAL NO NOR TYPE R-PDSO-N40 Not Qualified 85 °C -40 °C 40 PLASTIC/EPOXY SON TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE YES NO LEAD 500 µm DUAL 1.2 mm 18.4 mm 10 mm SON, TSSOP40,.8,20 Unknown EAR99 8542.32.00.51 TSOP 40
package
PH28F640W18BE60
Intel Corporation
Check for Price Buy Yes Transferred 67.1089 Mbit 16 4K,32K 4MX16 1.8 V 60 ns FLASH SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE BOTTOM YES YES NO 1 8,127 4000000 4.1943 M ASYNCHRONOUS 4 words PARALLEL 1.8 V 5 µA 40 µA 1.95 V 1.7 V CMOS INDUSTRIAL NO NOR TYPE R-PBGA-B56 Not Qualified e1 85 °C -40 °C 56 PLASTIC/EPOXY VFBGA BGA56,7X8,30 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 750 µm BOTTOM 1 mm 9 mm 7.7 mm VFBGA, BGA56,7X8,30 Compliant EAR99 8542.32.00.51 BGA 56
package
E28F800B5T90
Intel Corporation
Check for Price Buy No Obsolete 8.3886 Mbit 8 16K,8K,96K,128K 1MX8 5 V 90 ns FLASH CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK 8 TOP YES NO 100000 Write/Erase Cycles 1 1,2,1,7 1000000 1.0486 M ASYNCHRONOUS PARALLEL 5 V 8 µA 70 µA 5.5 V 4.5 V CMOS COMMERCIAL NO NOR TYPE R-PDSO-G48 Not Qualified e0 70 °C 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm 12 X 20 MM, TSOP-48 Unknown EAR99 8542.32.00.51 TSOP 48
package
TE28F160B3B110
Intel Corporation
Check for Price Buy Obsolete 16.7772 Mbit 16 4K,32K 1MX16 3 V 110 ns FLASH USER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK BOTTOM YES NO 1 8,31 1000000 1.0486 M ASYNCHRONOUS PARALLEL 2.7 V 5 µA 35 µA 3.6 V 2.7 V MOS INDUSTRIAL NO NOR TYPE R-PDSO-G48 Not Qualified 85 °C -40 °C 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm 12 X 20 MM, TSOP-48 Unknown EAR99 8542.32.00.51 TSOP 48
package
5962-9089903MXA
Intel Corporation
Check for Price Buy No No Obsolete 1.0486 Mbit 8 128KX8 5 V 150 ns FLASH YES NO 10000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS MILITARY NO NOR TYPE R-GDIP-T32 Not Qualified e0 125 °C -55 °C MIL-STD-883 32 CERAMIC, GLASS-SEALED WDIP DIP32,.6 RECTANGULAR IN-LINE, WINDOW NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 42.165 mm 15.24 mm WDIP, DIP32,.6 Unknown 3A001.a.2.c 8542.32.00.51 DIP 32
package
PF58F0031M0Y1BE
Intel Corporation
Check for Price Buy Yes Transferred 1.0737 Gbit 16 64MX16 1.8 V 108 MHz FLASH 1 64000000 67.1089 M SYNCHRONOUS PARALLEL 1.8 V 2 V 1.7 V CMOS MLC NAND TYPE R-PBGA-B105 Not Qualified e1 3 260 40 105 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 15 mm 11 mm TFBGA, Compliant EAR99 8542.32.00.51 BGA 105