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IPG20N06S2L65ATMA1
Infineon Technologies AG
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$0.7152 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F | not_compliant | EAR99 | Infineon | ||||||
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IPG20N06S2L65AATMA1
Infineon Technologies AG
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$0.7546 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | not_compliant | EAR99 | Infineon | ||
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IPG20N06S2L-65A
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | compliant | EAR99 | |||
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IPG20N06S2L65AUMA1
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | AEC-Q101 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | compliant | EAR99 |