Parametric results for: irf6633 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 2

11 hits Apply

41.0 mJ 6 65.0 mJ 4

Min (mJ) - Max (mJ)

11 hits Apply

DRAIN 10

11 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 10

11 hits Apply

DS Breakdown Voltage-Min (1)

20 V 10

11 hits Apply

Drain Current-Max (ID) (2)

16 A 10 69 A 1

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (1)

5.6 mΩ 10

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-XBCC-N3 7 R-XDSO-G2 3

11 hits Apply

e0 2 e1 3 e4 3

11 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 8

11 hits Apply

1 1 3 3

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (2)

2 3 3 7

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 11

11 hits Apply

UNSPECIFIED 10

11 hits Apply

RECTANGULAR 10

11 hits Apply

CHIP CARRIER 7 SMALL OUTLINE 3

11 hits Apply

Obsolete 8 Transferred 3

11 hits Apply

Yes 6

11 hits Apply

260 5

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

42 W 5 89 W 5

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply