Parametric results for: irfb11n50apbf under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

275.0 mJ 4

4 hits Apply

DRAIN 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

4 hits Apply

Drain Current-Max (ID) (1)

11 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

520 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

8.1 pF 2

4 hits Apply

TO-220AB 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 3

4 hits Apply

Manufacturer (3)

International Rectifier 1 Vishay Intertechnologies 2 Vishay Siliconix 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Not Recommended 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

260 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

170 W 2

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply