Parametric results for: irfb3306 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

184.0 mJ 4

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

5 hits Apply

Drain Current-Max (ID) (2)

120 A 2 160 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

4.2 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-220AB 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e3 2

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

175.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Active 2 End Of Life 1 Transferred 2

5 hits Apply

Yes 2

5 hits Apply

NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

230 W 4

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply