Parametric results for: is61s64326tq under SRAMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

6 ns 4

4 hits Apply

SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE 1

4 hits Apply

Clock Frequency-Max (fCLK) (1)

83 MHz 4

4 hits Apply

COMMON 4

4 hits Apply

R-PQFP-G100 4

4 hits Apply

e0 4

4 hits Apply

20 mm 2

4 hits Apply

Manufacturer (2)

Integrated Circuit Solution Inc 2 Integrated Silicon Solution Inc 2

4 hits Apply

Memory Density (1)

2.0972 Mbit 4

4 hits Apply

CACHE SRAM 2 STANDARD SRAM 2

4 hits Apply

Memory Width (1)

32 4

4 hits Apply

1.0 2

4 hits Apply

1 1

4 hits Apply

100 4

4 hits Apply

65.536 k 4

4 hits Apply

64000.0 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

70.0 °C 2 85.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

-40.0 °C 2 0.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

Organization (1)

64KX32 4

4 hits Apply

3-STATE 4

4 hits Apply

YES 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

LQFP 2 QFP 2

4 hits Apply

QFP100,.63X.87 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLATPACK 2 FLATPACK, LOW PROFILE 2

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 4

4 hits Apply