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Manufacturer Part Number: jan1n5311
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JAN1N5311-1
 Microchip Technology Inc 		$29.7666 No Active 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE NO 100 V 1 FIELD EFFECT 265 kΩ Qualified O-LALF-W2 e0 MIL-PRF-19500 DO-7 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL MICROCHIP TECHNOLOGY INC DO-35, 2 PIN compliant
JAN1N5311UR-1
 Microchip Technology Inc 		$31.2270 No Active 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE YES 100 V 1 FIELD EFFECT METALLURGICALLY BONDED Qualified O-LELF-R2 e0 MIL-19500 DO-213AB 1 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, LL41, MELF-2 compliant
JAN1N5311UR-1
 MACOM 		Check for Price Yes Transferred 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE YES 1 FIELD EFFECT METALLURGICALLY BONDED Qualified O-XELF-R2 DO-213AB NOT SPECIFIED NOT SPECIFIED ISOLATED 2 UNSPECIFIED ROUND LONG FORM WRAP AROUND END M/A-COM TECHNOLOGY SOLUTIONS INC compliant EAR99 8541.10.00.70
JAN1N5311-1
 Microsemi Corporation 		Check for Price No No Transferred 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE NO 1 FIELD EFFECT METALLURGICALLY BONDED Not Qualified O-XALF-W2 e0 MIL-19500/463 DO-35 ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WIRE AXIAL MICROSEMI CORP DO-35, 2 PIN unknown EAR99 8541.10.00.70 DO-7 2 Microsemi Corporation
JAN1N5311
 Compensated Devices Inc 		Check for Price Obsolete 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE NO 100 V 1 FIELD EFFECT 20 kΩ Not Qualified O-XALF-W2 MIL-19500/463G DO-7 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM WIRE AXIAL COMPENSATED DEVICES INC HERMETIC SEALED PACKAGE-2 unknown
JAN1N5311UR
 Microsemi Corporation 		Check for Price No Obsolete 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE YES 100 V 1 FIELD EFFECT 265 kΩ Not Qualified O-XELF-R2 e0 DO-213AB ISOLATED 2 UNSPECIFIED ROUND LONG FORM Tin/Lead (Sn/Pb) WRAP AROUND END MICROSEMI CORP HERMETIC SEALED PACKAGE-2 compliant EAR99 8541.10.00.70 DO-213AB 2
JAN1N5311UR-1
 Cobham PLC 		Check for Price Transferred 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE YES 1 FIELD EFFECT METALLURGICALLY BONDED Not Qualified O-XELF-R2 DO-213AB ISOLATED 2 UNSPECIFIED ROUND LONG FORM WRAP AROUND END COBHAM PLC unknown EAR99 8541.10.00.70
JAN1N5311UR-1
 VPT Components 		Check for Price Yes Active 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE YES 100 V 1 FIELD EFFECT HIGH SOURCE IMPEDANCE Qualified O-LELF-R2 MIL-19500 DO-213AB 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WRAP AROUND END VPT COMPONENTS MELF-2 compliant EAR99 8541.10.00.70
JAN1N5311
 Cobham PLC 		Check for Price No No Obsolete 2.5 V 3.6 mA 500 mW SILICON CURRENT REGULATOR DIODE SINGLE NO 100 V 1 FIELD EFFECT 265 kΩ 20 kΩ Not Qualified O-LALF-W2 e0 MIL-19500/463 DO-7 200 °C -55 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.70 DO-7 2
JAN1N5311
 Motorola Mobility LLC 		Check for Price Obsolete 2.5 V 3.6 mA 600 mW SILICON CURRENT REGULATOR DIODE SINGLE NO 100 V 1 FIELD EFFECT 20 kΩ Not Qualified O-LALF-W2 DO-204AA 200 °C -55 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL MOTOROLA INC O-LALF-W2 unknown EAR99 8541.10.00.70
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