Parametric results for: jan1n5802 under Rectifier Diodes
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JAN1N5802
Microchip Technology Inc
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$7.4556 | No | Active | 1 A | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||
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JAN1N5802US
Microchip Technology Inc
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$10.8246 | No | Active | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||||||||||
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JAN1N5802
Semtech Corporation
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$14.9505 | Transferred | 3.3 A | 875 mV | 25 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | SUPER FAST RECOVERY | 35 A | 1 | Qualified | O-LALF-W2 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | SEMTECH | G111, 2 PIN | 2 | G111 | EAR99 | 8541.10.00.80 | ||||||||||
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JAN1N5802URS
Microchip Technology Inc
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$19.4281 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | HERMETIC SEALED, GLASS, MELF-2 | |||||||||||||
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JAN1N5802US
Semtech Corporation
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$20.6050 | Transferred | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | SEMTECH | EAR99 | 8541.10.00.80 | |||||||||||||||
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JAN1N5802X
Microsemi Corporation
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Check for Price | Obsolete | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | compliant | O-LALF-W2 | EAR99 | |||||||||||||||||||||||
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JAN1N5802US
Microsemi Corporation
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Check for Price | No | No | Transferred | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Not Qualified | O-LELF-R2 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | unknown | Microsemi Corporation | EAR99 | 8541.10.00.80 | ||||||||||||||||
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JAN1N5802
Microsemi Corporation
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Check for Price | No | No | Transferred | 1 A | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | HERMETIC SEALED, GLASS, A PACKAGE-2 | EAR99 | 8541.10.00.80 | |||||||||
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JAN1N5802URS
Microsemi Corporation
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Check for Price | No | Transferred | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROSEMI CORP | compliant | HERMETIC SEALED, GLASS, MELF-2 | 2 | EAR99 | 8541.10.00.80 | MELF | ||||||||||
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JAN1N5802R
Bkc Semiconductors Inc
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Check for Price | Transferred | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | Not Qualified | O-LALF-W2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | BKC SEMICONDUCTORS INC | unknown | EAR99 |