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JAN1N5807
Microchip Technology Inc
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$6.6802 | No | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||
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JAN1N5807/TR
Microchip Technology Inc
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$6.7684 | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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JAN1N5807US
Microchip Technology Inc
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$8.7754 | No | Active | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5B, 2 PIN | compliant | ||||||||||||
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JAN1N5807US
Microsemi Corporation
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$10.5281 | No | No | Transferred | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5B, 2 PIN | unknown | EAR99 | 8541.10.00.80 | 2 | Microsemi Corporation | |||||||
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JAN1N5807US
Semtech Corporation
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$15.4565 | Transferred | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||
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JAN1N5807
Semtech Corporation
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$17.2026 | Transferred | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | SUPER FAST RECOVERY | 125 A | 1 | Qualified | O-LALF-W2 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | G112, 2 PIN | unknown | EAR99 | 8541.10.00.80 | 2 | G112 | ||||||||||||
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JAN1N5807URS
Microchip Technology Inc
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$17.4371 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | ||||||||||||||||
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JAN1N5807URS
Microsemi Corporation
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$19.4656 | No | Transferred | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, MELF-2 | compliant | EAR99 | 8541.10.00.80 | 2 | Microsemi Corporation | MELF | |||||||||||
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JAN1N5807
Defense Logistics Agency
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Check for Price | Active | 6 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-XALF-W2 | MIL-19500/477F | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | unknown | ||||||||||||||||||||||
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JAN1N5807R
Bkc Semiconductors Inc
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Check for Price | Transferred | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 |