Parametric results for: jan1n5807 under Rectifier Diodes

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Manufacturer Part Number: jan1n5807
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JAN1N5807
Microchip Technology Inc
$6.6802 No Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE NO 50 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LALF-W2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS PACKAGE-2 compliant
JAN1N5807/TR
Microchip Technology Inc
$6.7684 Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE NO 50 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LALF-W2 e0 MIL-19500 175 °C -65 °C NOT SPECIFIED NOT SPECIFIED ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL MICROCHIP TECHNOLOGY INC unknown EAR99 8541.10.00.80
JAN1N5807US
Microchip Technology Inc
$8.7754 No Active 3 A 875 mV 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 50 V 1 HIGH RELIABILITY ULTRA FAST RECOVERY 125 A 1 Qualified O-LELF-R2 e0 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, D-5B, 2 PIN compliant
JAN1N5807US
Microsemi Corporation
$10.5281 No No Transferred 3 A 875 mV 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 50 V 1 HIGH RELIABILITY ULTRA FAST RECOVERY 125 A 1 Not Qualified O-LELF-R2 e0 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP HERMETIC SEALED, GLASS, D-5B, 2 PIN unknown EAR99 8541.10.00.80 2 Microsemi Corporation
JAN1N5807US
Semtech Corporation
$15.4565 Transferred 6 A 875 mV 30 ns SILICON RECTIFIER DIODE SINGLE YES 50 V 1 ULTRA FAST RECOVERY POWER 125 A 1 Qualified O-LELF-R2 MIL-19500/477F 175 °C ISOLATED 2 GLASS ROUND LONG FORM WRAP AROUND END SEMTECH CORP unknown EAR99 8541.10.00.80
JAN1N5807
Semtech Corporation
$17.2026 Transferred 6 A 875 mV 30 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 50 V 1 SUPER FAST RECOVERY 125 A 1 Qualified O-LALF-W2 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL SEMTECH CORP G112, 2 PIN unknown EAR99 8541.10.00.80 2 G112
JAN1N5807URS
Microchip Technology Inc
$17.4371 No Active 3 A 30 ns SILICON RECTIFIER DIODE SINGLE YES 50 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LELF-R2 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, MELF-2 compliant
JAN1N5807URS
Microsemi Corporation
$19.4656 No Transferred 3 A 30 ns SILICON RECTIFIER DIODE SINGLE YES 50 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Not Qualified O-LELF-R2 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WRAP AROUND END MICROSEMI CORP HERMETIC SEALED, GLASS, MELF-2 compliant EAR99 8541.10.00.80 2 Microsemi Corporation MELF
JAN1N5807
Defense Logistics Agency
Check for Price Active 6 A 30 ns SILICON RECTIFIER DIODE SINGLE NO 1 ULTRA FAST RECOVERY POWER 125 A 1 Qualified O-XALF-W2 MIL-19500/477F ISOLATED 2 UNSPECIFIED ROUND LONG FORM WIRE AXIAL DEFENSE LOGISTICS AGENCY unknown
JAN1N5807R
Bkc Semiconductors Inc
Check for Price Transferred 6 A 875 mV 30 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 1 FAST RECOVERY 125 A 1 Not Qualified O-LALF-W2 ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL BKC SEMICONDUCTORS INC unknown EAR99 8541.10.00.80