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JANTX1N5822.TR
Semtech Corporation
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$49.5622 | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | |||||||||||
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JANTX1N5822US.TR
Semtech Corporation
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$49.5622 | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | SEMTECH | ||||||||||
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JANTX1N5822US/TR
Microchip Technology Inc
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$67.7289 | No | Active | 3 A | 700 mV | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | |||||||||
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JANTX1N5822US
Microchip Technology Inc
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$73.3950 | No | Active | 3 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/620E | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | HERMETIC SEALED, D-5B, 2 PIN | |||||||||
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JANTX1N5822
Microchip Technology Inc
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$88.3848 | No | Active | 3 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/620E | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED PACKAGE-2 | ||||||||||||
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JANTX1N5822USTR
Microsemi Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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JANTX1N5822
Micross Components
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Check for Price | Active | RECTIFIER DIODE | MICROSS COMPONENTS | unknown | |||||||||||||||||||||||||||||||||||||
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JANTX1N5822
Semtech Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | Qualified | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | MELF-2 | |||||||||
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JANTX1N5822
Microsemi Corporation
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Check for Price | No | No | Transferred | 3 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/620E | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | EAR99 | Microsemi Corporation | 8541.10.00.80 | HERMETIC SEALED PACKAGE-2 | 2 | |||||||
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JANTX1N5822
Compensated Devices Inc
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Not Qualified | O-LALF-W2 | MIL-19500/620 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown |