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JANTX1N6642U
Cobham Semiconductor Solutions
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$7.1886 | Transferred | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/578 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/METELICS INC | HERMETIC SEALED GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.70 | |||||||||||||
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JANTX1N6642U
Microchip Technology Inc
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$7.5031 | No | Active | 300 mA | 1.2 V | 5 ns | 500 nA | 750 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/578E | 200 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACEMOUNT PACKAGE-2 | compliant | |||||||
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JANTX1N6642US/TR
Microchip Technology Inc
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$7.6673 | Active | 300 mA | 1.2 V | 5 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/578E | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | ||||||||
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JANTX1N6642US
MACOM
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$9.2351 | Transferred | 300 mA | 5 ns | 750 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | HIGH RELIABILITY | Qualified | O-LELF-R2 | e0 | MIL-19500/578 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | HERMETIC SEALED GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | MACOM | |||||||||||
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JANTX1N6642US
Microchip Technology Inc
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$9.9200 | No | Active | 300 mA | 1.2 V | 5 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/578E | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACEMOUNT PACKAGE-2 | compliant | Microchip | |||||||
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JANTX1N6642US
Microsemi Corporation
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$11.6262 | No | No | Transferred | 300 mA | 1.2 V | 5 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Not Qualified | O-XELF-R2 | e0 | MIL-19500/578E | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | SURFACEMOUNT PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||
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JANTX1N6642U
Microsemi Corporation
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$13.3892 | No | No | Transferred | 300 mA | 1.2 V | 5 ns | 500 nA | 750 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Not Qualified | O-XELF-R2 | e0 | MIL-19500/578E | 200 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | SURFACEMOUNT PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||
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JANTX1N6642UB
Microchip Technology Inc
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$24.3382 | No | Active | 300 mA | 800 mV | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | R-CDSO-N3 | e0 | MIL-19500/578E | 200 °C | 3 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | SMALL OUTLINE | TIN LEAD | NO LEAD | DUAL | MICROCHIP TECHNOLOGY INC | CERAMIC PACKAGE-3 | compliant | |||||||||||
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JANTX1N6642UB/TR
Microchip Technology Inc
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$24.4874 | Active | 300 mA | 800 mV | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | R-CDSO-N3 | e0 | MIL-19500/578E | 200 °C | 3 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | SMALL OUTLINE | TIN LEAD | NO LEAD | DUAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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JANTX1N6642UBD
Microchip Technology Inc
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$27.2277 | No | Active | 300 mA | 800 mV | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | R-CDSO-N3 | e0 | MIL-19500/578E | 200 °C | 3 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | SMALL OUTLINE | TIN LEAD | NO LEAD | DUAL | MICROCHIP TECHNOLOGY INC | CERAMIC PACKAGE-3 | compliant |