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K4B2G0846F-BYMA0
Samsung Semiconductor
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Check for Price | Obsolete | 2.1475 Gbit | 8 | 256MX8 | 1.35 V | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | 85 °C | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | 2016-02-16 |