Parametric results for: k4d551638f-tc40 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

3 hits Apply

Access Time-Max (1)

600 ps 1

3 hits Apply

AUTO/SELF REFRESH 1

3 hits Apply

Clock Frequency-Max (fCLK) (1)

250 MHz 3

3 hits Apply

COMMON 3

3 hits Apply

2,4,8 3

3 hits Apply

R-PDSO-G66 3

3 hits Apply

22.22 mm 1

3 hits Apply

Manufacturer (1)

Samsung Semiconductor 3

3 hits Apply

Memory Density (1)

268.4355 Mbit 3

3 hits Apply

GDDR1 DRAM 3

3 hits Apply

Memory Width (1)

16 3

3 hits Apply

1 2

3 hits Apply

1.0 1

3 hits Apply

1 1

3 hits Apply

66 3

3 hits Apply

16.7772 M 3

3 hits Apply

1.6E7 3

3 hits Apply

SYNCHRONOUS 1

3 hits Apply

65.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

16MX16 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSSOP 3

3 hits Apply

TSSOP66,.46 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 3

3 hits Apply

Refresh Cycles (1)

8192 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

2.6 V 3

3 hits Apply