Parametric results for: k4d553238fjc33 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

2 hits Apply

Access Time-Max (1)

600 ps 2

2 hits Apply

AUTO/SELF REFRESH 1

2 hits Apply

Clock Frequency-Max (fCLK) (1)

300 MHz 1

2 hits Apply

COMMON 1

2 hits Apply

2,4,8 1

2 hits Apply

S-PBGA-B144 2

2 hits Apply

e0 1

2 hits Apply

12 mm 1

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

268.4355 Mbit 2

2 hits Apply

DDR DRAM 1 GDDR1 DRAM 1

2 hits Apply

Memory Width (1)

32 2

2 hits Apply

1.0 1

2 hits Apply

1 1

2 hits Apply

144 2

2 hits Apply

8.3886 M 2

2 hits Apply

8000000.0 2

2 hits Apply

SYNCHRONOUS 1

2 hits Apply

65.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

8MX32 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

FBGA 1 LFBGA 1

2 hits Apply

BGA144,12X12,32 1

2 hits Apply

SQUARE 2

2 hits Apply

GRID ARRAY, FINE PITCH 1 GRID ARRAY, LOW PROFILE, FINE PITCH 1

2 hits Apply

Refresh Cycles (1)

4096 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 2

2 hits Apply