Parametric results for: k4e660812bjc45 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 2

2 hits Apply

Access Time-Max (2)

45 ns 1 50 ns 1

Min (ns) - Max (ns)

2 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH 1

2 hits Apply

COMMON 1

2 hits Apply

R-PDSO-J32 2

2 hits Apply

e0 1

2 hits Apply

20.96 mm 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

67.1089 Mbit 2

2 hits Apply

EDO DRAM 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

32 2

2 hits Apply

8.3886 M 2

2 hits Apply

8000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

8MX8 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SOJ 2

2 hits Apply

SOJ32,.44 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Refresh Cycles (1)

8192 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply