Parametric results for: k4e660812ctc6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 2

2 hits Apply

Access Time-Max (1)

60 ns 2

2 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 2

2 hits Apply

R-PDSO-G32 2

2 hits Apply

20.95 mm 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

67.1089 Mbit 2

2 hits Apply

EDO DRAM 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

32 2

2 hits Apply

8.3886 M 2

2 hits Apply

8000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

8MX8 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP2 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply