Findchips: Parametric Search Results for k4h560438

Parametric results for: k4h560438 under DRAMs

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		K4H560438E-NLB3T Samsung Semiconductor
		K4H560438H-UCB0 Samsung Semiconductor
		K4H560438E-GCB00 Samsung Semiconductor
		K4H560438E-ZCCC0 Samsung Semiconductor
		K4H560438E-VCB30 Samsung Semiconductor
		K4H560438J-LCB30 Samsung Semiconductor
		K4H560438E-GCAA Samsung Semiconductor
		K4H560438N-LLB3T Samsung Semiconductor
		K4H560438E-GCA2 Samsung Semiconductor
		K4H560438H-UCA20 Samsung Semiconductor

				Most Relevant								Technical																		Compliance			Operating Conditions				Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

166 MHz

8192

CACHE DRAM MODULE

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

3 mA

260 µA

CMOS

COMMERCIAL

R-PDSO-G54

Not Qualified

70 °C

240

PLASTIC/EPOXY

TSSOP

TSSOP54,.36,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

GULL WING

500 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP54,.36,20

compliant

EAR99

8542.32.00.24

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.3 V

750 ps

133 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

3 mA

250 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.24

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

FOUR BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

240

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA,

compliant

EAR99

8542.32.00.24

BGA

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.6 V

650 ps

200 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

4 mA

310 µA

2.7 V

2.5 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.24

BGA

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G54

Not Qualified

70 °C

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

GULL WING

500 µm

DUAL

1.2 mm

14 mm

7.6 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2,

compliant

EAR99

8542.32.00.24

TSOP2

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

166 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

3 mA

270 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSOP2

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN BISMUTH

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2, TSSOP66,.46

unknown

EAR99

8542.32.00.24

TSOP2

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN LEAD

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA,

compliant

EAR99

8542.32.00.24

BGA

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

3 mA

105 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

unknown

EAR99

8542.32.00.24

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

3 mA

240 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN LEAD

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.24

BGA

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

3 mA

250 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.24

TSOP2

1 2 3 4 5 Next

Compare

K4H560438E-NLB3T

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

166 MHz

8192

CACHE DRAM MODULE

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

3 mA

260 µA

CMOS

COMMERCIAL

R-PDSO-G54

Not Qualified

70 °C

240

PLASTIC/EPOXY

TSSOP

TSSOP54,.36,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

GULL WING

500 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP54,.36,20

compliant

EAR99

8542.32.00.24

K4H560438H-UCB0

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.3 V

750 ps

133 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

3 mA

250 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

TIN BISMUTH

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

8542.32.00.24

K4H560438E-GCB00

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

FOUR BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

240

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA,

compliant

EAR99

8542.32.00.24

BGA

K4H560438E-ZCCC0

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.6 V

650 ps

200 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

4 mA

310 µA

2.7 V

2.5 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.24

BGA

K4H560438E-VCB30

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G54

Not Qualified

70 °C

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

GULL WING

500 µm

DUAL

1.2 mm

14 mm

7.6 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2,

compliant

EAR99

8542.32.00.24

TSOP2

K4H560438J-LCB30

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

166 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

3 mA

270 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSOP2

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN BISMUTH

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2, TSSOP66,.46

unknown

EAR99

8542.32.00.24

TSOP2

K4H560438E-GCAA

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN LEAD

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA,

compliant

EAR99

8542.32.00.24

BGA

K4H560438N-LLB3T

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

3 mA

105 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

unknown

EAR99

8542.32.00.24

K4H560438E-GCA2

Samsung Semiconductor

Check for Price

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

3 mA

240 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN LEAD

BALL

1 mm

BOTTOM

1.2 mm

14 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TBGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.24

BGA

K4H560438H-UCA20

Samsung Semiconductor

Check for Price

Yes

Obsolete

268.4355 Mbit

64MX4

2.5 V

750 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

3 mA

250 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.24

TSOP2

1 2 3 4 5 Next