Register or Sign In
Parametric » Memory » DRAMs

Parametric results for: k4s563233f under DRAMs

Filter Your Search

1 - 10 of 96 results

|
96 hits
-
96 hits
96 hits
-
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
-
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
96 hits
Manufacturer Part Number: k4s563233f
Select parts from the table below to compare.
 Compare
Compare
K4S563233F-FF600
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 240 30 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-FE1H0
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-HE1H0
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 3 85 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-FL60
 Samsung Semiconductor 		Check for Price No Active 268.4355 Mbit 32 8MX32 5.4 ns 166 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 200 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S563233F-HC600
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 70 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-HG1L0
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 85 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-HG75
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 32 8MX32 6 ns 133 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 180 µA CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S563233F-FC750
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 3 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-FL750
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 3 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 240 30 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
K4S563233F-FL600
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 240 30 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24
12345Next