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Manufacturer Part Number: k4s56323lf
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K4S56323LF-HL60
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 32 8MX32 2.5 V 5.4 ns 166 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 200 µA CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323LF-FL1L0
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 2.5 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 240 30 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323LF-FC75
 Samsung Semiconductor 		Check for Price No Active 268.4355 Mbit 32 8MX32 2.5 V 6 ns 133 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 180 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323LF-FR1H0
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 2.5 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 240 30 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323LF-FL1H
 Samsung Semiconductor 		Check for Price No Active 268.4355 Mbit 32 8MX32 2.5 V 7 ns 111 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 170 µA CMOS OTHER R-PBGA-B90 Not Qualified e0 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323LF-HE75
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 32 8MX32 2.5 V 6 ns 133 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 180 µA CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323LF-HC750
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 2.5 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified 3 70 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
K4S56323LF-HS75
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 32 8MX32 2.5 V 6 ns 133 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 180 µA CMOS OTHER R-PBGA-B90 Not Qualified 85 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323LF-HR60
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 32 8MX32 2.5 V 5.4 ns 166 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 1,2,4,8,FP 500 µA 200 µA CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 90 PLASTIC/EPOXY FBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24
K4S56323LF-FC1H0
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 2.5 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified 70 °C -25 °C 240 30 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 90
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