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K4S643234E-SE80
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 2.5 V | 6 ns | 125 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1.2 mA | 135 µA | 2.7 V | 2.3 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.45 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA90,9X15,32 | 90 | unknown | EAR99 | 8542.32.00.02 | ||
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K4S643234E-SE70
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 2.5 V | 5.5 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1.2 mA | 145 µA | 2.7 V | 2.3 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.45 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA90,9X15,32 | 90 | unknown | EAR99 | 8542.32.00.02 | ||
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K4S643234E-SN70
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 2.5 V | 5.5 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1.2 mA | 145 µA | 2.7 V | 2.3 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.45 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA90,9X15,32 | 90 | unknown | EAR99 | 8542.32.00.02 | ||
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K4S643234E-SN80
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 2.5 V | 6 ns | 125 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1.2 mA | 135 µA | 2.7 V | 2.3 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.45 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA90,9X15,32 | 90 | unknown | EAR99 | 8542.32.00.02 | ||
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K4S643234E-SE10
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 2.5 V | 6 ns | 100 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1.2 mA | 125 µA | 2.7 V | 2.3 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.45 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA90,9X15,32 | 90 | unknown | EAR99 | 8542.32.00.02 | ||
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K4S643234E-SN10
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 32 | 2MX32 | 2.5 V | 6 ns | 100 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1.2 mA | 125 µA | 2.7 V | 2.3 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e0 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.45 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA90,9X15,32 | 90 | unknown | EAR99 | 8542.32.00.02 |