Parametric results for: k4s643234est under DRAMs

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Manufacturer Part Number: k4s643234es
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K4S643234E-SE80
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 32 2MX32 2.5 V 6 ns 125 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1.2 mA 135 µA 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY LFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.45 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA90,9X15,32 90 unknown EAR99 8542.32.00.02
K4S643234E-SE70
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 32 2MX32 2.5 V 5.5 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1.2 mA 145 µA 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY LFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.45 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA90,9X15,32 90 unknown EAR99 8542.32.00.02
K4S643234E-SN70
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 32 2MX32 2.5 V 5.5 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1.2 mA 145 µA 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY LFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.45 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA90,9X15,32 90 unknown EAR99 8542.32.00.02
K4S643234E-SN80
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 32 2MX32 2.5 V 6 ns 125 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1.2 mA 135 µA 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY LFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.45 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA90,9X15,32 90 unknown EAR99 8542.32.00.02
K4S643234E-SE10
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 32 2MX32 2.5 V 6 ns 100 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1.2 mA 125 µA 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY LFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.45 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA90,9X15,32 90 unknown EAR99 8542.32.00.02
K4S643234E-SN10
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 32 2MX32 2.5 V 6 ns 100 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 2000000 2.0972 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1.2 mA 125 µA 2.7 V 2.3 V CMOS OTHER R-PBGA-B90 Not Qualified e0 85 °C -25 °C 90 PLASTIC/EPOXY LFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.45 mm 13 mm 11 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA90,9X15,32 90 unknown EAR99 8542.32.00.02