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K4T56043QF-GCCC
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 4 | 64MX4 | 1.8 V | 600 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 245 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e0 | 3 | 95 °C | 240 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA60,9X11,32 | 60 | unknown | EAR99 | 8542.32.00.24 | |||
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K4T56043QF-GCE60
Samsung Semiconductor
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Check for Price | No | Obsolete | 268.4355 Mbit | 4 | 64MX4 | 1.8 V | 450 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | R-PBGA-B60 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 60 | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||
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K4T56083QF-ZCCC
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 1.8 V | 600 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 255 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA60,9X11,32 | 60 | unknown | EAR99 | 8542.32.00.24 | |||
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K4T56043QF-GLD50
Samsung Semiconductor
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Check for Price | No | Obsolete | 268.4355 Mbit | 4 | 64MX4 | 1.8 V | 500 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | R-PBGA-B60 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 60 | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||
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K4T56083QF-ZCE6
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 1.8 V | 450 ps | 333 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 265 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA60,9X11,32 | 60 | compliant | EAR99 | 8542.32.00.24 | |||||
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K4T56043QF-GCD5
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 4 | 64MX4 | 1.8 V | 500 ps | 267 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 250 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e0 | 95 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA60,9X11,32 | 60 | unknown | EAR99 | 8542.32.00.24 | |||||
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K4T56083QF-GLE60
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 1.8 V | 450 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | R-PBGA-B60 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 60 | compliant | EAR99 | 8542.32.00.24 | ||||||||||||||||
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K4T56043QF-ZCCC
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 4 | 64MX4 | 1.8 V | 600 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 245 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e1 | 3 | 95 °C | 260 | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA60,9X11,32 | 60 | unknown | EAR99 | 8542.32.00.24 | ||||
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K4T56083QF-GCE6
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 1.8 V | 450 ps | 333 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 8 mA | 265 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | e0 | 95 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, BGA60,9X11,32 | 60 | unknown | EAR99 | 8542.32.00.24 | |||||
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K4T56043QF-ZCCC0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 4 | 64MX4 | 1.8 V | 600 ps | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | R-PBGA-B60 | Not Qualified | e1 | 3 | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 60 | compliant | EAR99 | 8542.32.00.24 |