Parametric results for: k4t56163qi-zce6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

2 hits Apply

Access Time-Max (1)

450 ps 1

2 hits Apply

AUTO/SELF REFRESH 1

2 hits Apply

R-PBGA-B84 1

2 hits Apply

13 mm 1

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

268.4355 Mbit 1

2 hits Apply

SYNCHRONOUS DRAM 1

2 hits Apply

Memory Width (1)

16 1

2 hits Apply

1.0 1

2 hits Apply

1 1

2 hits Apply

84 1

2 hits Apply

16.7772 M 1

2 hits Apply

1.6E7 1

2 hits Apply

SYNCHRONOUS 1

2 hits Apply

Organization (1)

16MX16 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

TFBGA 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

2 hits Apply