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K6T1008V2C-RD10
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 100 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.6 V | 3 V | CMOS | OTHER | R-PDSO-G32 | Not Qualified | 85 °C | -25 °C | 32 | PLASTIC/EPOXY | TSOP1-R | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | TSOP1 | TSOP1-R, | 32 | compliant | EAR99 | 8542.32.00.41 | ||||||||||||
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K6T1008U2C-YD10
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3 V | 100 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | OTHER | R-PDSO-G32 | Not Qualified | 85 °C | -25 °C | 32 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | TSOP1 | TSOP1, | 32 | compliant | EAR99 | 8542.32.00.41 | ||||||||||||
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K6T1008C2C-GB700
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 70 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 3 mm | 20.47 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOIC | SOP, | 32 | unknown | EAR99 | 8542.32.00.41 | |||||||||||||
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K6T1008V2C-GD100
Samsung Semiconductor
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Check for Price | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 100 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.6 V | 3 V | CMOS | OTHER | R-PDSO-G32 | Not Qualified | 85 °C | -25 °C | 32 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 3 mm | 20.47 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOIC | SOP, | 32 | compliant | EAR99 | 8542.32.00.41 | |||||||||||
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K6T1008C2E-GL550
Samsung Semiconductor
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Check for Price | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 55 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 50 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | SOP | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 3 mm | 20.47 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOIC | SOP, SOP32,.56 | 32 | compliant | EAR99 | 8542.32.00.41 | ||||||
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K6T1008U2C-GB10
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3 V | 100 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 3 mm | 20.47 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOIC | SOP, | 32 | compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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K6T1008S2E-YF85
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 2.5 V | 85 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | TSOP | TSOP1, | 32 | unknown | EAR99 | 8542.32.00.41 | ||||||||||||
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K6T1008U2E-NB100
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3 V | 100 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | TSOP1 | TSSOP, | 32 | unknown | EAR99 | 8542.32.00.41 | |||||||||||||
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K6T1008V2C-NB100
Samsung Semiconductor
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Check for Price | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 100 ns | STANDARD SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | TSOP1 | TSSOP, | 32 | unknown | EAR99 | 8542.32.00.41 | |||||||||||||
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K6T1008V2E-RB10
Samsung Semiconductor
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Check for Price | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 100 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | YES | 2 V | 30 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 240 | 30 | 32 | PLASTIC/EPOXY | TSOP1-R | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | TSOP1 | TSOP1-R, TSSOP32,.8,20 | 32 | compliant | EAR99 | 8542.32.00.41 |