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KFG2G16Q2M-DEB60
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 2.0972 Mbit | 16 | 64K | 128KX16 | 1.8 V | 76 ns | FLASH | YES | NO | 1 | 2K | 128000 | 131.072 k | SYNCHRONOUS | 1K words | PARALLEL | 1.8 V | YES | 50 µA | 40 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -30 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 13 mm | 10 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | ||||||
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KFG2G16Q2M-DEB6S
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 64K | 128MX16 | 1.8 V | 76 ns | FLASH | YES | NO | 2K | 128000000 | 134.2177 M | 1K words | PARALLEL | YES | 50 µA | 40 µA | CMOS | OTHER | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e3 | 1 | 85 °C | -30 °C | 63 | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | MATTE TIN | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA63,10X12,32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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KFG2G16Q2M-DEB8S
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 64K | 128MX16 | 1.8 V | 76 ns | FLASH | YES | NO | 2K | 128000000 | 134.2177 M | 1K words | PARALLEL | YES | 50 µA | 45 µA | CMOS | OTHER | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 3 | 85 °C | -30 °C | 260 | 63 | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA63,10X12,32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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KFG2G16Q2M-DEB6T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 64K | 128MX16 | 1.8 V | 76 ns | FLASH | YES | NO | 2K | 128000000 | 134.2177 M | 1K words | PARALLEL | YES | 50 µA | 40 µA | CMOS | OTHER | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e3 | 1 | 85 °C | -30 °C | 63 | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | MATTE TIN | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA63,10X12,32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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KFG2G16Q2M-DEB8T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 64K | 128MX16 | 1.8 V | 76 ns | FLASH | YES | NO | 2K | 128000000 | 134.2177 M | 1K words | PARALLEL | YES | 50 µA | 45 µA | CMOS | OTHER | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 3 | 85 °C | -30 °C | 260 | 63 | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA63,10X12,32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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KFG2G16Q2M-DEB6
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 64K | 128MX16 | 1.8 V | 76 ns | FLASH | YES | NO | 2K | 128000000 | 134.2177 M | 1K words | PARALLEL | YES | 50 µA | 40 µA | CMOS | OTHER | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e3 | 1 | 85 °C | -30 °C | 63 | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | MATTE TIN | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA63,10X12,32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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KFG2G16Q2M-DEB8
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 64K | 128MX16 | 1.8 V | 76 ns | FLASH | YES | NO | 2K | 128000000 | 134.2177 M | 1K words | PARALLEL | YES | 50 µA | 40 µA | CMOS | OTHER | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 3 | 85 °C | -30 °C | 260 | 63 | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA63,10X12,32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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KFG2G16Q2M-DEB80
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 2.0972 Mbit | 16 | 64K | 128KX16 | 1.8 V | 76 ns | FLASH | YES | NO | 1 | 2K | 128000 | 131.072 k | SYNCHRONOUS | 1K words | PARALLEL | 1.8 V | YES | 50 µA | 45 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL EXTENDED | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 3 | 85 °C | -30 °C | 260 | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 13 mm | 10 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, BGA63,10X12,32 | 63 | unknown | EAR99 | 8542.32.00.51 |