Findchips: Parametric Search Results for kfn2g16q2m


Select Parts		Part Number

		KFN2G16Q2M-DEB6T Samsung Semiconductor
		KFN2G16Q2M-DEB5T Samsung Semiconductor
		KFN2G16Q2M-DEB50 Samsung Semiconductor
		KFN2G16Q2M-DEB6000 Samsung Semiconductor
		KFN2G16Q2M-DEB60 Samsung Semiconductor
		KFN2G16Q2M-DEB5 Samsung Semiconductor
		KFN2G16Q2M-DEB6 Samsung Semiconductor

				Most Relevant						Technical																					Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Command User Interface	Data Polling	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

YES

128000000

134.2177 M

ASYNCHRONOUS

1K words

PARALLEL

1.8 V

YES

50 µA

40 µA

1.95 V

1.7 V

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

BGA

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

YES

128000000

134.2177 M

ASYNCHRONOUS

1K words

PARALLEL

1.8 V

YES

50 µA

40 µA

1.95 V

1.7 V

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

BGA

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Active

2.1475 Gbit

64K

128MX16

1.8 V

11.5 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

MLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

Compare

KFN2G16Q2M-DEB6T

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

KFN2G16Q2M-DEB5T

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

KFN2G16Q2M-DEB50

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

YES

128000000

134.2177 M

ASYNCHRONOUS

1K words

PARALLEL

1.8 V

YES

50 µA

40 µA

1.95 V

1.7 V

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

BGA

KFN2G16Q2M-DEB6000

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

KFN2G16Q2M-DEB60

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

YES

128000000

134.2177 M

ASYNCHRONOUS

1K words

PARALLEL

1.8 V

YES

50 µA

40 µA

1.95 V

1.7 V

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13 mm

11 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

BGA

KFN2G16Q2M-DEB5

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

64K

128MX16

1.8 V

76 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

KFN2G16Q2M-DEB6

Samsung Semiconductor

Check for Price

Yes

Active

2.1475 Gbit

64K

128MX16

1.8 V

11.5 ns

FLASH

YES

128000000

134.2177 M

1K words

PARALLEL

YES

50 µA

40 µA

CMOS

OTHER

YES

MLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA63,10X12,32

compliant

EAR99

8542.32.00.51

Parametric results for: kfn2g16q2m under Flash Memories