Register or Sign In
Parametric » Memory » DRAMs

Parametric results for: m12l64164a-6tg under DRAMs

Filter Your Search

1 - 4 of 4 results

|
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
4 hits
Manufacturer Part Number: m12l64164a6tg
Select parts from the table below to compare.
 Compare
Compare
M12L64164A-6TG2M
 Elite Semiconductor Memory Technology Inc 		Check for Price Contact Manufacturer 67.1089 Mbit 16 4MX16 3.3 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, unknown EAR99 8542.32.00.02
M12L64164A-6TG2C
 Elite Semiconductor Memory Technology Inc 		Check for Price Contact Manufacturer 67.1089 Mbit 16 4MX16 3.3 V FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, unknown EAR99 8542.32.00.02
M12L64164A-6TG
 Elite Semiconductor Memory Technology Inc 		Check for Price Yes Active 67.1089 Mbit 16 4MX16 3.3 V 5.5 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1 mA 140 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, TSOP54,.46,32 unknown EAR99 8542.32.00.02 TSOP2 54
M12L64164A-6TG2Y
 Elite Semiconductor Memory Technology Inc 		Check for Price Active 67.1089 Mbit 16 4MX16 3.3 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 70 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, unknown EAR99 8542.32.00.02