Parametric results for: m93c under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 24 40 YEAR DATA RETENTION 230 40 YEARS DATA RETENTION 54 40 YEARS DATA RETENTION; CONFIGURABLE AS 256 X 16 47 40 YEARS DATA RETENTION; MICROWIRE BUS INTERFACE 73 40 YEARS OF DATA RETENTION 311 AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 12 CONFIGURABLE AS 128 X 16 100 CONFIGURABLE AS 16 X 16 19 CONFIGURABLE AS 1K X 16 9 CONFIGURABLE AS 256 X 16 19 CONFIGURABLE AS 512 X 16 9 CONFIGURABLE AS 64 X 16 73 DATA RETENTION = 40 YEARS 399 DATA RETENTION > 40 YEARS; CONFIGURABLE AS 1K X 16 24 DATA RETENTION=40 YEARS 243 ENDURANCE:1000K DATA CHANGES; 40 YEAR DATA RETENTION 130 MICROWIRE BUS INTERFACE 7 MICROWIRE BUS INTERFACE; 2.0V READ; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS 10 MICROWIRE BUS INTERFACE; 2.0V READ; AUTOMATIC WRITE; ERAL AT 3.0V TO 5.5V; DATA RETENTION = 40 YEARS 54 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS 135 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; ERAL AT 3.0V TO 4.0V; DATA RETENTION = 40 YEARS 6 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; ERAL AT 3.0V TO 6.0V; DATA RETENTION = 40 YEARS 51 USER DEFINED WRITE PROTECTED AREA; DATA RETENTION = 40 YEARS 80

5,508 hits Apply

8 3,073 16 151

Min - Max

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Clock Frequency-Max (fCLK) (4)

250 kHz 1,655 500 kHz 97 1 MHz 1,420 2 MHz 1,763

Min (MHz) - Max (MHz)

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10 58 15 15 40 4,385 200 1

Min - Max

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100000.0 Write/Erase Cycles 71 1000000.0 Write/Erase Cycles 3,575 4000000.0 Write/Erase Cycles 1

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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R-GDIP-T8 17 R-PBCC-B8 20 R-PDIP-T8 974 R-PDSO-G14 45 R-PDSO-G8 3,593 R-PDSO-N8 76 R-XDSO-N8 372 S-PDSO-G8 372 X-XUUC-N8 8

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e0 2,426 e3 232 e4 842

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3 mm 840 4.4 mm 1,401 4.9 mm 1,814 5.02 mm 30 8.61 mm 11 8.65 mm 11 9.185 mm 18 9.27 mm 222 9.55 mm 36 9.817 mm 636

Min (mm) - Max (mm)

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Manufacturer (7)

Exel Microelectronics Inc 2 Fairchild Semiconductor Corporation 1,828 National Semiconductor Corporation 290 Rochester Electronics LLC 377 Samsung Semiconductor 64 STMicroelectronics 2,386 Texas Instruments 561

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Memory Density (6)

256 bit 639 1.024 kbit 1,481 2.048 kbit 1,255 4.096 kbit 1,003 8.192 kbit 410 16.384 kbit 641

Min (bit) - Max (bit)

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EEPROM 5,481

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Memory Width (2)

8 316 16 5,133

Min - Max

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1 781 3 1 NOT SPECIFIED 42

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1.0 5,118

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14 45 8 5,432

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16 words 687 64 words 1,370 128 words 1,251 256 words 1,083 512 words 445 1.024 k 586 2.048 k 55

Min (words) - Max (words)

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16.0 687 64.0 1,370 128.0 1,251 256.0 1,083 512.0 445 1000.0 582 1024.0 4 2000.0 55

Min - Max

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SYNCHRONOUS 5,118

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70.0 °C 1,208 85.0 °C 1,740 105.0 °C 482 125.0 °C 1,990

Min (°C) - Max (°C)

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-55.0 °C 67 -40.0 °C 4,075 -20.0 °C 70 0.0 °C 1,208

Min (°C) - Max (°C)

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Organization (11)

1024X16 4 128X16 1,140 128X8 111 16X16 687 1KX16 582 256X16 968 256X8 115 2KX8 55 512X16 410 512X8 35 64X16 1,370

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3-STATE 947

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CERAMIC, GLASS-SEALED 17 PLASTIC/EPOXY 5,080 UNSPECIFIED 380

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DIE 8 DIP 991 HVBCC 20 HVSON 136 SOP 2,229 TSSOP 1,781 VSON 312

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DIP8,.3 736 SOLCC8,.11,20 316 SOP14,.25 3 SOP8,.25 1,403 TSSOP8,.19 330 TSSOP8,.25 802

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RECTANGULAR 5,097 SQUARE 372 UNSPECIFIED 8

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CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE 20 IN-LINE 991 SMALL OUTLINE 2,229 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 136 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1,781 SMALL OUTLINE, VERY THIN PROFILE 312 UNCASED CHIP 8

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Supply Voltage-Nom (Vsup) (4)

2.5 V 172 3 V 45 3.3 V 1,251 5 V 3,714

Min (V) - Max (V)

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