Findchips: Parametric Search Results for mp61

Parametric results for: mp61 under Bridge Rectifier Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		SMP610G Sino-American Silicon Products Inc
		MP61001-30 Microchip Technology Inc
		MP61012-P00 Microchip Technology Inc
		MP61007-P00 Microchip Technology Inc
		MP61004-P00 Microchip Technology Inc
		MP61003 Microsemi Corporation
		MP61011 Microsemi Corporation
		MP6180 Rectron Semiconductor
		MP61003-P00 Microchip Technology Inc
		MP61005 Microchip Technology Inc

		Most Relevant													Technical							Compliance	Operating Conditions		Physical						Other
Composite Price	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Diode Capacitance-Max	Diode Capacitance-Nom	Diode Forward Resistance-Max	Diode Element Material	Breakdown Voltage-Min	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Application	Diode Res Test Current	Diode Res Test Frequency	Minority Carrier Lifetime-Nom	Non-rep Pk Forward Current-Max	Number of Phases	Reverse Test Voltage	JESD-30 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code

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Obsolete

6 A

1 V

BRIDGE RECTIFIER DIODE

BRIDGE, 4 ELEMENTS

1 kV

200 A

150 °C

SINO-AMERICAN SILICON PRODUCTS INC

unknown

EAR99

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Active

0.03 pF

3 Ω

GALLIUM ARSENIDE

200 V

PIN DIODE

SINGLE

YES

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

50 ns

200 V

O-CEMW-N2

175 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

NO LEAD

END

MICROCHIP TECHNOLOGY INC

compliant

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Active

0.35 pF

800 mΩ

GALLIUM ARSENIDE

50 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

5 ns

50 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

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Active

0.1 pF

2 Ω

GALLIUM ARSENIDE

75 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

10 ns

75 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

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Active

0.06 pF

2 Ω

GALLIUM ARSENIDE

100 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

15 ns

100 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

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Transferred

0.05 pF

3 Ω

200 V

PIN DIODE

YES

20 mA

1 GHz

10 V

175 °C

MICROSEMI CORP

compliant

EAR99

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Transferred

0.23 pF

800 mΩ

50 V

PIN DIODE

YES

20 mA

1 GHz

10 V

175 °C

MICROSEMI CORP

compliant

EAR99

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Active

RECTRON LTD

compliant

EAR99

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Active

0.05 pF

3 Ω

GALLIUM ARSENIDE

200 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

50 ns

200 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

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Active

0.07 pF

2 Ω

SILICON

100 V

PIN DIODE

SINGLE

YES

POSITIVE-INTRINSIC-NEGATIVE

20 mA

1 GHz

15 ns

10 V

175 °C

MICROCHIP TECHNOLOGY INC

compliant

EAR99

1 2 3 4 5 Next

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SMP610G

Sino-American Silicon Products Inc

Check for Price

Obsolete

6 A

1 V

BRIDGE RECTIFIER DIODE

BRIDGE, 4 ELEMENTS

1 kV

200 A

150 °C

SINO-AMERICAN SILICON PRODUCTS INC

unknown

EAR99

MP61001-30

Microchip Technology Inc

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Active

0.03 pF

3 Ω

GALLIUM ARSENIDE

200 V

PIN DIODE

SINGLE

YES

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

50 ns

200 V

O-CEMW-N2

175 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

NO LEAD

END

MICROCHIP TECHNOLOGY INC

compliant

MP61012-P00

Microchip Technology Inc

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Active

0.35 pF

800 mΩ

GALLIUM ARSENIDE

50 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

5 ns

50 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

MP61007-P00

Microchip Technology Inc

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Active

0.1 pF

2 Ω

GALLIUM ARSENIDE

75 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

10 ns

75 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

MP61004-P00

Microchip Technology Inc

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Active

0.06 pF

2 Ω

GALLIUM ARSENIDE

100 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

15 ns

100 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

MP61003

Microsemi Corporation

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Transferred

0.05 pF

3 Ω

200 V

PIN DIODE

YES

20 mA

1 GHz

10 V

175 °C

MICROSEMI CORP

compliant

EAR99

MP61011

Microsemi Corporation

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Transferred

0.23 pF

800 mΩ

50 V

PIN DIODE

YES

20 mA

1 GHz

10 V

175 °C

MICROSEMI CORP

compliant

EAR99

MP6180

Rectron Semiconductor

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Active

RECTRON LTD

compliant

EAR99

MP61003-P00

Microchip Technology Inc

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Active

0.05 pF

3 Ω

GALLIUM ARSENIDE

200 V

PIN DIODE

SINGLE

POSITIVE-INTRINSIC-NEGATIVE

ATTENUATOR; SWITCHING

20 mA

1 GHz

50 ns

200 V

175 °C

-55 °C

MICROCHIP TECHNOLOGY INC

compliant

MP61005

Microchip Technology Inc

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Active

0.07 pF

2 Ω

SILICON

100 V

PIN DIODE

SINGLE

YES

POSITIVE-INTRINSIC-NEGATIVE

20 mA

1 GHz

15 ns

10 V

175 °C

MICROCHIP TECHNOLOGY INC

compliant

EAR99

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