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MT29F2G08ABAEAWP:E
Micron Technology Inc
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$3.1734 | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | 25 ns | FLASH | YES | NO | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | 3.3 V | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e3 | 70 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | PLASTIC, TSOP1-48 | compliant | EAR99 | 8542.32.00.51 | Micron | |||||||||
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MT29F2G08ABAEAWP-ITX:E
Micron Technology Inc
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$3.2350 | Yes | Yes | Obsolete | 2.1475 Gbit | 8 | 256MX8 | 3.3 V | FLASH | 1 | 256000000 | 268.4355 M | ASYNCHRONOUS | PARALLEL | 2.7 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PDSO-G48 | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | ROHS COMPLIANT, PLASTIC, TSOP1-48 | compliant | EAR99 | 8542.32.00.51 | Micron | TSOP1 | 48 | |||||||||||||||||
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MT29F2G08ABAEAWP-IT:E
Micron Technology Inc
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$3.4812 | Yes | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | FLASH | YES | NO | 10 | 100000 Write/Erase Cycles | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP1-48 | compliant | Micron | |||||||||
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MT29F2G08ABAEAWP-AITX:E
Micron Technology Inc
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Check for Price | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | 25 ns | FLASH | YES | NO | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | 3.3 V | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e3 | 85 °C | -40 °C | 260 | AEC-Q100 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP1-48 | compliant | EAR99 | 8542.32.00.51 | Micron | |||||||
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MT29F2G08ABAEAWP:ETR
Micron Technology Inc
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Check for Price | Yes | Active | 2.1475 Gbit | 8 | 256MX8 | 3.3 V | FLASH | 1 | 256000000 | 268.4355 M | ASYNCHRONOUS | PARALLEL | 2.7 V | 3.6 V | 2.7 V | CMOS | COMMERCIAL | SLC NAND TYPE | R-PDSO-G48 | e3 | 70 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | PLASTIC, TSOP1-48 | compliant | EAR99 | 8542.32.00.51 | TSOP1 | 48 | ||||||||||||||||||||
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MT29F2G08ABAEAWP-ITX:ETR
Micron Technology Inc
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Check for Price | Yes | Obsolete | 2.1475 Gbit | 8 | 256MX8 | 3.3 V | FLASH | 1 | 256000000 | 268.4355 M | ASYNCHRONOUS | PARALLEL | 2.7 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PDSO-G48 | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | PLASTIC, TSOP1-48 | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||||||||||||||||
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MT29F2G08ABAEAWP-ITX
Micron Technology Inc
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Check for Price | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | 20 ns | FLASH | YES | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | 3.3 V | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PDSO-G48 | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP-48 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||
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MT29F2G08ABAEAWP-IT:ETR
Micron Technology Inc
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Check for Price | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | FLASH | YES | NO | 10 | 100000 Write/Erase Cycles | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP1, TSSOP48,.8,20 | compliant | 3A991.B.1.A | 8542.32.00.51 | Micron | |||||||||
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MT29F2G08ABAEAWP-AATX
Micron Technology Inc
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Check for Price | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | 20 ns | FLASH | YES | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | 3.3 V | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | OTHER | SLC NAND TYPE | R-PDSO-G48 | e3 | 115 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP-48 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||
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MT29F2G08ABAEAWP-AITX
Micron Technology Inc
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Check for Price | Yes | Active | 2.1475 Gbit | 8 | 128K | 256MX8 | 3.3 V | 20 ns | FLASH | YES | 1 | 2K | 256000000 | 268.4355 M | ASYNCHRONOUS | 2K words | PARALLEL | 3.3 V | YES | 100 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PDSO-G48 | e3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP-48 | compliant | EAR99 | 8542.32.00.51 |