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MT29F4G08ABBFAH4-AAT:F
Micron Technology Inc
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$3.0600 | Active | 4.295 Gbit | 8 | 256K | 512MX8 | 1.8 V | FLASH | YES | NO | 10 | 100000 Write/Erase Cycles | 1 | 2K | 512000000 | 536.8709 M | ASYNCHRONOUS | 4K words | PARALLEL | 1.8 V | YES | 50 µA | 35 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | 30 ns | R-PBGA-B63 | e1 | 105 °C | -40 °C | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | VFBGA-63 | compliant | Micron | ||||||||||
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MT29F4G08ABBFAH4-IT:F
Micron Technology Inc
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$3.1150 | Yes | Active | 4.295 Gbit | 8 | 256K | 512MX8 | 1.8 V | FLASH | YES | NO | 10 | 100000 Write/Erase Cycles | 1 | 2K | 512000000 | 536.8709 M | ASYNCHRONOUS | 4K words | PARALLEL | 1.8 V | YES | 50 µA | 35 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | 30 ns | R-PBGA-B63 | e1 | 85 °C | -40 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | VFBGA-63 | compliant | Micron | |||||||
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MT29F4G08ABBEAH4-IT:E
Micron Technology Inc
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$3.8050 | Obsolete | FLASH | 3.3 V | SLC NAND TYPE | MICRON TECHNOLOGY INC | unknown | Micron | EAR99 | 8542.32.00.51 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F4G08ABBDAH4-IT:D
Micron Technology Inc
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$4.3650 | Yes | Yes | Active | 4.295 Gbit | 8 | 128K | 512MX8 | 1.8 V | 25 ns | FLASH | YES | NO | 1 | 4K | 512000000 | 536.8709 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 20 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | VFBGA, BGA63,10X12,32 | compliant | Micron | EAR99 | 8542.32.00.51 | |||||||
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MT29F4G08ABBDAHC-IT:D
Micron Technology Inc
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$4.7424 | Yes | Yes | Active | 4.295 Gbit | 8 | 128K | 512MX8 | 1.8 V | 25 ns | FLASH | YES | NO | 1 | 4K | 512000000 | 536.8709 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 20 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 13 mm | 10.5 mm | MICRON TECHNOLOGY INC | 10.50 X 13 MM, 1 MM HEIGHT, VFBGA-63 | not_compliant | Micron | EAR99 | 8542.32.00.51 | |||||
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MT29F4G08ABBDAH4:D
Micron Technology Inc
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$4.9307 | Yes | Yes | Active | 4.295 Gbit | 8 | 128K | 512MX8 | 1.8 V | 25 ns | FLASH | YES | NO | 1 | 4K | 512000000 | 536.8709 M | ASYNCHRONOUS | 2K words | PARALLEL | YES | 50 µA | 20 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 70 °C | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | 9 X 11 MM, 1 MM HEIGHT, VFBGA-63 | compliant | Micron | EAR99 | 8542.32.00.51 | |||||||||
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MT29F4G08ABBDAH4-ITX:D
Micron Technology Inc
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Check for Price | Yes | Obsolete | 4.295 Gbit | 8 | 128K | 512MX8 | 1.8 V | 25 ns | FLASH | YES | NO | 1 | 4K | 512000000 | 536.8709 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 20 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | VFBGA, BGA63,10X12,32 | compliant | EAR99 | 8542.32.00.51 | |||||||||
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MT29F4G08ABBDAH4-IT:DTR
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 8 | 512MX8 | 1.8 V | FLASH | 1 | 512000000 | 536.8709 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PBGA-B63 | e1 | 85 °C | -40 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | VFBGA-63 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||||||
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MT29F4G08ABBDAHC-IT:DTR
Micron Technology Inc
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Check for Price | Active | 4.295 Gbit | 8 | 512MX8 | 1.8 V | FLASH | 1 | 512000000 | 536.8709 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | SLC NAND TYPE | R-PBGA-B63 | e1 | 85 °C | -40 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1 mm | 13 mm | 10.5 mm | MICRON TECHNOLOGY INC | VFBGA-63 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||||||||
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MT29F4G08ABBDAHC:D
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 4.295 Gbit | 8 | 128K | 512MX8 | 1.8 V | 25 ns | FLASH | YES | NO | 1 | 4K | 512000000 | 536.8709 M | ASYNCHRONOUS | 2K words | PARALLEL | YES | 50 µA | 20 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | 70 °C | 260 | 30 | 63 | PLASTIC/EPOXY | VFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 13 mm | 10.5 mm | MICRON TECHNOLOGY INC | 10.50 X 13 MM, 1 MM HEIGHT, VFBGA-63 | compliant | Micron | EAR99 | 8542.32.00.51 |