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MT47H128M16RT-25EAIT:CTR
Micron Technology Inc
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Check for Price | Active | DDR2 DRAM | 260 | 30 | TIN SILVER COPPER | MICRON TECHNOLOGY INC | , | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||
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MT47H128M16RT-25EAAT:A
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 105 °C | -40 °C | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | BGA | 84 | 8542.32.00.36 | ||||||||||||||
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MT47H128M16RT-25EAAT:C
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 12 mA | 330 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 105 °C | -40 °C | AEC-Q100 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | MICRON TECHNOLOGY INC | TFBGA, BGA84,9X15,32 | compliant | EAR99 | BGA | 84 | 8542.32.00.36 | ||||
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MT47H128M16RT-25EAIT:A
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 85 °C | -40 °C | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | BGA | 84 | 8542.32.00.36 | ||||||||||||||
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MT47H128M16RT-25EAIT:C
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 12 mA | 330 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | MICRON TECHNOLOGY INC | TFBGA, BGA84,9X15,32 | compliant | EAR99 | BGA | 84 | 8542.32.00.36 | |||
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MT47H128M16RT-25E:A
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | BGA | 84 | 8542.32.00.36 |