Parametric results for: mt47hxxxmxx under DRAMs

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Manufacturer Part Number: mt47h
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MT47H64M16HR-3 IT:H
Micron Technology Inc
$1.3162 Yes Yes Obsolete 1.0737 Gbit 16 64MX16 1.8 V 450 ps 333 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 7 mA 230 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 Not Qualified e1 85 °C -40 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm MICRON TECHNOLOGY INC TFBGA, BGA84,9X15,32 unknown 3A991 8542.32.00.32 Micron
MT47H64M8SH-25E:H
Micron Technology Inc
$3.8007 Yes Yes Active 536.8709 Mbit 8 64MX8 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 150 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm MICRON TECHNOLOGY INC TFBGA, BGA60,9X11,32 compliant EAR99 8542.32.00.28 Micron BGA 60
MT47H32M16NF-25E:H
Micron Technology Inc
$3.9634 Yes Yes Active 536.8709 Mbit 16 32MX16 1.8 V 400 ps 400 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 215 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm MICRON TECHNOLOGY INC FBGA-84 not_compliant EAR99 8542.32.00.28 Micron BGA 84
MT47H128M8SH-25E:M
Micron Technology Inc
$4.5348 Yes Yes Active 1.0737 Gbit 8 128MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 10 mm 8 mm MICRON TECHNOLOGY INC TFBGA, BGA60,9X11,32 compliant EAR99 8542.32.00.32 Micron BGA 60
MT47H64M16NF-25E:M
Micron Technology Inc
$4.6572 Yes Yes Active 1.0737 Gbit 16 64MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm MICRON TECHNOLOGY INC 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 compliant EAR99 8542.32.00.32 Micron BGA 84
MT47H256M8EB-25E:C
Micron Technology Inc
$10.0799 Yes Yes Active 2.1475 Gbit 8 256MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 250 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B60 Not Qualified e1 85 °C 260 30 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 11.5 mm 9 mm MICRON TECHNOLOGY INC TFBGA, BGA60,9X11,32 compliant EAR99 8542.32.00.36 Micron BGA 60
MT47H128M16RT-25E:C
Micron Technology Inc
$13.1100 Yes Yes Active 2.1475 Gbit 16 128MX16 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 330 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 9 mm MICRON TECHNOLOGY INC 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 compliant EAR99 8542.32.00.36 Micron BGA 84
MT47H256M8EB-25EIT:C
Micron Technology Inc
$18.3700 Yes Yes Obsolete 2.1475 Gbit 8 256MX8 1.8 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 4,8 12 mA 250 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B60 Not Qualified e1 85 °C -40 °C 60 PLASTIC/EPOXY TFBGA BGA60,9X11,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 11.5 mm 9 mm MICRON TECHNOLOGY INC TFBGA, BGA60,9X11,32 compliant EAR99 8542.32.00.36 BGA 60
MT47H512M4EB-187EIT:C
Micron Technology Inc
Check for Price Yes Active 2.1475 Gbit 4 512MX4 1.8 V 350 ps MULTI BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH 1 1 512000000 536.8709 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B60 e1 85 °C -40 °C 60 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 11.5 mm 9 mm MICRON TECHNOLOGY INC TFBGA, compliant EAR99 8542.32.00.36 BGA 60
MT47H128M8BT-3:E
Micron Technology Inc
Check for Price Yes Yes Obsolete 1.0737 Gbit 8 128MX8 1.8 V 450 ps 333 MHz 8192 DDR2 DRAM COMMON 4,8 128000000 134.2177 M 3-STATE 4,8 CMOS R-PBGA-B92 Not Qualified 260 92 PLASTIC/EPOXY FBGA BGA92,9X21,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM MICRON TECHNOLOGY INC FBGA, BGA92,9X21,32 compliant EAR99 8542.32.00.32