Parametric results for: n25q064a11ese40e under Flash Memories

All Filters Clock Frequency-Max (fCLK) Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

108 MHz 1

1 hit Apply

100000.0 Write/Erase Cycles 1

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S-PDSO-G8 1

1 hit Apply

5.285 mm 1

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Manufacturer (1)

Micron Technology Inc 1

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Memory Density (1)

67.1089 Mbit 1

1 hit Apply

FLASH 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

8 1

1 hit Apply

8.3886 M 1

1 hit Apply

8000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

8MX8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOP 1

1 hit Apply

SOP8,.3 1

1 hit Apply

SQUARE 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply