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NAND128W3A2BN6E
Micron Technology Inc
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$2.1963 | Yes | Yes | Obsolete | 134.2177 Mbit | 8 | 16K | 16MX8 | 3 V | 35 ns | FLASH | YES | NO | 1 | 1K | 16000000 | 16.7772 M | ASYNCHRONOUS | 512 words | PARALLEL | 3 V | YES | 50 µA | 20 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP | TSOP-48 | 48 | compliant | EAR99 | 8542.32.00.51 | Micron | ||
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NAND128W3A2BN6E
STMicroelectronics
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Check for Price | Yes | Transferred | 134.2177 Mbit | 8 | 16K | 16MX8 | 3 V | 12 µs | FLASH | YES | NO | 1 | 1K | 16000000 | 16.7772 M | ASYNCHRONOUS | 512 words | PARALLEL | 3 V | YES | 50 µA | 20 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e3/e6 | 85 °C | -40 °C | 260 | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN/TIN BISMUTH | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | STMICROELECTRONICS | TSOP | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | 48 | compliant | EAR99 | 8542.32.00.51 | |||||
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NAND128W3A2BN6E
Numonyx Memory Solutions
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Check for Price | Yes | Yes | Transferred | 134.2177 Mbit | 8 | 16K | 16MX8 | 3 V | 12 µs | FLASH | YES | NO | 1 | 1K | 16000000 | 16.7772 M | ASYNCHRONOUS | 512 words | PARALLEL | 3 V | YES | 50 µA | 20 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PDSO-G48 | Not Qualified | e4 | 85 °C | -40 °C | 245 | 30 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | NICKEL PALLADIUM GOLD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | NUMONYX | TSOP | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 | 48 | unknown | EAR99 | 8542.32.00.51 |