Parametric results for: nand128w3a2bn6e under Flash Memories

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Manufacturer Part Number: nand128w3a2bn6e
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NAND128W3A2BN6E
Micron Technology Inc
$2.1963 Yes Yes Obsolete 134.2177 Mbit 8 16K 16MX8 3 V 35 ns FLASH YES NO 1 1K 16000000 16.7772 M ASYNCHRONOUS 512 words PARALLEL 3 V YES 50 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE R-PDSO-G48 Not Qualified e4 3 85 °C -40 °C 260 30 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm MICRON TECHNOLOGY INC TSOP TSOP-48 48 compliant EAR99 8542.32.00.51 Micron
NAND128W3A2BN6E
STMicroelectronics
Check for Price Yes Transferred 134.2177 Mbit 8 16K 16MX8 3 V 12 µs FLASH YES NO 1 1K 16000000 16.7772 M ASYNCHRONOUS 512 words PARALLEL 3 V YES 50 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE R-PDSO-G48 Not Qualified e3/e6 85 °C -40 °C 260 NOT SPECIFIED 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN/TIN BISMUTH GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm STMICROELECTRONICS TSOP 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 48 compliant EAR99 8542.32.00.51
NAND128W3A2BN6E
Numonyx Memory Solutions
Check for Price Yes Yes Transferred 134.2177 Mbit 8 16K 16MX8 3 V 12 µs FLASH YES NO 1 1K 16000000 16.7772 M ASYNCHRONOUS 512 words PARALLEL 3 V YES 50 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE R-PDSO-G48 Not Qualified e4 85 °C -40 °C 245 30 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES NICKEL PALLADIUM GOLD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm NUMONYX TSOP 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 48 unknown EAR99 8542.32.00.51