Parametric results for: ne-48 under Flash Memories

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Manufacturer Part Number: ne48
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NE48F512-300
LSI Corporation
Check for Price No Obsolete 524.288 kbit 8 512 64KX8 5 V 300 ns FLASH 100 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO NO 10 100 Write/Erase Cycles 1 128 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 400 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD SEEQ TECHNOLOGY INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
NE48F010-300
LSI Corporation
Check for Price No Obsolete 1.0486 Mbit 8 1K 128KX8 5 V 300 ns FLASH 100 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO NO 10 100 Write/Erase Cycles 1 128 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 400 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD SEEQ TECHNOLOGY INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
NE48F010K-250
LSI Corporation
Check for Price No Obsolete 1.0486 Mbit 8 1K 128KX8 5 V 250 ns FLASH 1000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO NO 10 1000 Write/Erase Cycles 1 128 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 400 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD SEEQ TECHNOLOGY INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
NE48F010K250/B
LSI Corporation
Check for Price Obsolete SEEQ TECHNOLOGY INC , unknown EAR99 8542.32.00.71
NE48F512K200/B
LSI Corporation
Check for Price Obsolete SEEQ TECHNOLOGY INC unknown EAR99 8542.32.00.71
NE48F512-250/B
LSI Corporation
Check for Price Obsolete SEEQ TECHNOLOGY INC , unknown EAR99 8542.32.00.71
NE48F010-200
LSI Corporation
Check for Price No Obsolete 1.0486 Mbit 8 1K 128KX8 5 V 200 ns FLASH 100 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO NO 10 100 Write/Erase Cycles 1 128 128000 131.072 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 400 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD SEEQ TECHNOLOGY INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
NE48F512K-250
LSI Corporation
Check for Price No Obsolete 524.288 kbit 8 512 64KX8 5 V 250 ns FLASH 1000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO NO 10 1000 Write/Erase Cycles 1 128 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 400 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD SEEQ TECHNOLOGY INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
NE48F512-300/B
LSI Corporation
Check for Price Obsolete SEEQ TECHNOLOGY INC , unknown EAR99 8542.32.00.71
NE48F512K-300
LSI Corporation
Check for Price No Obsolete 524.288 kbit 8 512 64KX8 5 V 300 ns FLASH 1000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO NO 10 1000 Write/Erase Cycles 1 128 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 400 µA 60 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD SEEQ TECHNOLOGY INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51