Parametric results for: ne32584c-t1 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

LOW NOISE 5

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (2)

3 V 4 4 V 1

Min (V) - Max (V)

5 hits Apply

Drain Current-Max (ID) (2)

20 mA 4 90 mA 1

Min (A) - Max (A)

5 hits Apply

HETERO-JUNCTION 5

5 hits Apply

Highest Frequency Band (2)

KU BAND 4 X BAND 1

5 hits Apply

O-CRDB-F4 3 X-CXMW-F4 2

5 hits Apply

e0 2

5 hits Apply

Manufacturer (3)

California Eastern Laboratories (CEL) 1 NEC Compound Semiconductor Devices Ltd 2 NEC Electronics Group 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

DEPLETION MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

5 hits Apply

ROUND 3 UNSPECIFIED 2

5 hits Apply

DISK BUTTON 3 MICROWAVE 2

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply