Parametric results for: pd54003 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 9

9 hits Apply

SOURCE 9

9 hits Apply

Configuration (1)

SINGLE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

25 V 9

9 hits Apply

Drain Current-Max (ID) (1)

4 A 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 9

9 hits Apply

R-PDSO-F2 3 R-PDSO-G2 3 S-PQCC-N5 3

9 hits Apply

e0 3 e3 2

9 hits Apply

Manufacturer (1)

STMicroelectronics 9

9 hits Apply

1 1 3 1

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (2)

2 6 5 3

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 3 165.0 °C 6

Min (°C) - Max (°C)

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 6 SQUARE 3

9 hits Apply

CHIP CARRIER 3 SMALL OUTLINE 6

9 hits Apply

Active 3 Obsolete 6

9 hits Apply

No 2 Yes 2

9 hits Apply

NOT SPECIFIED 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

19.5 W 1 44 W 1 52.8 W 6

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply