Parametric results for: plan under Microwave Mixer Diodes

All Filters Additional Feature Breakdown Voltage-Min Case Connection Configuration Diode Capacitance-Max Diode Capacitance-Nom Diode Element Material Diode Type Forward Voltage-Max (VF) Frequency Band Impedance-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Operating Frequency-Max Operating Frequency-Min Output Current-Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Reverse Recovery Time-Max Surface Mount Technology

HIGH RELIABILITY 79

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Breakdown Voltage-Min (10)

1 V 7 1.2 V 1 1.5 V 2 2.25 V 1 2.5 V 10 3 V 6 4 V 3 5 V 3 30 V 1 35 V 7

Min (V) - Max (V)

164 hits Apply

CATHODE 1 ISOLATED 87

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Configuration (7)

BRIDGE, 4 ELEMENTS 4 COMMON ANODE, 2 ELEMENTS 2 COMMON CATHODE, 2 ELEMENTS 2 COMPLEX 4 RING, 4 ELEMENTS 12 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 3 SINGLE 137

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Diode Capacitance-Max (18)

0.03 pF 2 0.035 pF 2 0.05 pF 12 0.08 pF 1 0.12 pF 4 0.13 pF 4 0.23 pF 1 0.25 pF 4 0.8 pF 2 1 pF 1 1.05 pF 6 1.1 pF 3 1.2 pF 48 1.25 pF 9 1.5 pF 1 1.9 pF 3 3 pF 48 4 pF 1

Min (pF) - Max (pF)

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Diode Capacitance-Nom (1)

1.7 pF 1

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Diode Element Material (1)

SILICON 164

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Diode Type (1)

MIXER DIODE 164

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Forward Voltage-Max (VF) (11)

100 mV 5 110 mV 1 120 mV 1 180 mV 3 275 mV 1 350 mV 10 550 mV 1 800 mV 4 850 mV 1 1 V 36 1.1 V 3

Min (V) - Max (V)

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KA BAND TO MILLIMETER WAVE BAND 5 MILLIMETER WAVE BAND 13 S BAND TO X BAND 1 ULTRA HIGH FREQUENCY 5 VERY HIGH FREQUENCY 34 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 16 X BAND 7 X BAND TO K BAND 13

164 hits Apply

200 Ω 14 10 kΩ 1

Min (Ω) - Max (Ω)

164 hits Apply

DO-213AA 9 DO-34 15 DO-35 54 TO-236AA 1

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O-CEMW-N2 4 O-GALF-W2 2 O-LALF-W2 65 O-LELF-N2 6 O-LELF-R2 10 O-XALF-W2 4 R-CDMW-F2 6 R-CDMW-F4 4 R-CDMW-N2 5 R-CDSO-C2 3 R-CTMW-F3 2 R-MUMW-X1 1 R-PDSO-F2 20 R-PDSO-G2 9 R-PDSO-G3 7 S-CDMW-F4 12 S-CQMW-F4 4

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e0 18 e2 22 e3 13 e6 1

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Manufacturer (11)

Cobham Advanced Electronic Solutions 12 Dynex Semiconductor 27 Hitachi Ltd 38 KEC 1 NXP Semiconductors 13 Renesas Electronics Corporation 52 ROHM Semiconductor 1 Temic Semiconductors 6 Toshiba America Electronic Components 2 Vishay Intertechnologies 7 Vishay Semiconductors 5

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Number of Elements (3)

1 137 2 7 4 20

Min - Max

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Operating Frequency-Max (4)

12 GHz 8 20 GHz 5 46 GHz 2 100 GHz 1

Min (GHz) - Max (GHz)

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Operating Frequency-Min (5)

8 GHz 8 10 GHz 5 36 GHz 2 46 GHz 2 56 GHz 1

Min (GHz) - Max (GHz)

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Output Current-Max (6)

5 mA 3 50 mA 13 100 mA 11 150 mA 5 200 mA 1 100 A 7

Min (A) - Max (A)

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Power Dissipation-Max (6)

75 mW 12 100 mW 1 150 mW 34 250 mW 48 500 mW 3 715 mW 8

Min (W) - Max (W)

164 hits Apply

Rep Pk Reverse Voltage-Max (4)

30 V 1 35 V 37 70 V 2 100 V 1

Min (V) - Max (V)

164 hits Apply

Reverse Current-Max (2)

50 nA 2 100 nA 8

Min (µA) - Max (µA)

164 hits Apply

Reverse Recovery Time-Max (2)

3 ns 2 3.5 ns 2

Min (µs) - Max (µs)

164 hits Apply

Surface Mount (2)

NO 72 YES 92

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Technology (1)

PLANAR DOPED BARRIER 164

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