Findchips: Parametric Search Results for s25f

Parametric results for: s25f under Rectifier Diodes

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		SS25FA onsemi
		S25FL208K0RMFI013 Cypress Semiconductor
		S25FL256LDPNFB010 Infineon Technologies AG
		S25FL256LDPNFB013 Infineon Technologies AG
		S25FL512SAGBHMA13 Infineon Technologies AG
		S25FL512SAGBHMA10 Infineon Technologies AG
		S25FL064LABNFA010 Infineon Technologies AG
		S25FL064P0XBHV020 Cypress Semiconductor
		S25FL064LABBHI030 Infineon Technologies AG
		S25FL064LABNFI043 Infineon Technologies AG

				Most Relevant											Technical						Compliance				Operating Conditions					Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Functions	Number of Phases	Reverse Test Voltage	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Ihs Manufacturer	Manufacturer Package Code	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer	Package Description	Clock Frequency-Max (fCLK)	Data Retention Time-Min	Endurance	Length	Memory Density	Memory IC Type	Memory Width	Number of Words	Number of Words Code	Operating Mode	Organization	Package Code	Package Equivalence Code	Parallel/Serial	Programming Voltage	Seated Height-Max	Serial Bus Type	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Supply Voltage-Nom (Vsup)	Temperature Grade	Type	Width	Write Protection	Output Characteristics	Screening Level	Alternate Memory Width

$0.1611

Yes

Active

2 A

700 mV

9 ns

400 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

50 V

SCHOTTKY

LOW POWER LOSS

EFFICIENCY

50 A

50 V

R-PDSO-F2

AEC-Q101

150 °C

-55 °C

260

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

FLAT

DUAL

ONSEMI

425AB

not_compliant

EAR99

8541.10.00.80

onsemi

$0.9967

Yes

Obsolete

YES

CMOS

Not Qualified

S-PDSO-G8

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

GULL WING

1.27 mm

DUAL

CYPRESS SEMICONDUCTOR CORP

compliant

EAR99

8542.32.00.51

SOIC-8

76 MHz

100000 Write/Erase Cycles

5.283 mm

8.3886 Mbit

FLASH

1.0486 M

1000000

SYNCHRONOUS

1MX8

SOP

SOP8,.3

SERIAL

3 V

2.159 mm

SPI

32 µA

25 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

5.283 mm

HARDWARE/SOFTWARE

$1.0000

Yes

Active

YES

CMOS

R-PDSO-N8

105 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

1.27 mm

DUAL

INFINEON TECHNOLOGIES AG

compliant

WSON-8

66 MHz

100000 Write/Erase Cycles

6 mm

268.4355 Mbit

FLASH

33.5544 M

32000000

SYNCHRONOUS

32MX8

HVQCCN

SOLCC8,.25

SERIAL

3 V

800 µm

SPI

60 µA

50 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

$1.0000

Yes

Active

YES

CMOS

R-PDSO-N8

105 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

1.27 mm

DUAL

INFINEON TECHNOLOGIES AG

compliant

WSON-8

66 MHz

100000 Write/Erase Cycles

6 mm

268.4355 Mbit

FLASH

33.5544 M

32000000

SYNCHRONOUS

32MX8

HVQCCN

SOLCC8,.25

SERIAL

3 V

800 µm

SPI

60 µA

50 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

$1.0000

Yes

Active

YES

CMOS

R-PBGA-B24

125 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, THIN PROFILE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

BGA-24

133 MHz

100000 Write/Erase Cycles

8 mm

512.7537 Mbit

FLASH

64.0942 M

64000000

SYNCHRONOUS

64MX8

TBGA

BGA24,5X5,40

SERIAL

3 V

1.2 mm

SPI

300 µA

100 µA

3.6 V

2.7 V

3 V

AUTOMOTIVE

NOR TYPE

6 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

$1.0000

Yes

Active

YES

CMOS

R-PBGA-B24

125 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, THIN PROFILE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

Infineon

BGA-24

133 MHz

100000 Write/Erase Cycles

8 mm

512.7537 Mbit

FLASH

64.0942 M

64000000

SYNCHRONOUS

64MX8

TBGA

BGA24,5X5,40

SERIAL

3 V

1.2 mm

SPI

300 µA

100 µA

3.6 V

2.7 V

3 V

AUTOMOTIVE

NOR TYPE

6 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

$1.6044

Yes

Active

YES

CMOS

IT ALSO HAVE X1 MEMORY WIDTH

S-PDSO-N8

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

800 µm

DUAL

INFINEON TECHNOLOGIES AG

compliant

Infineon

108 MHz

4 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

HVSON

SERIAL

3 V

600 µm

3.6 V

2.7 V

3 V

INDUSTRIAL

4 mm

3-STATE

AEC-Q100

$1.7745

Yes

Obsolete

YES

CMOS

Not Qualified

R-PBGA-B24

105 °C

-40 °C

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

BALL

1.2 mm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

EAR99

8542.32.00.51

BGA-24

104 MHz

100000 Write/Erase Cycles

8 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

VBGA

BGA24,5X5,40

SERIAL

3 V

1 mm

QSPI

10 µA

38 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

3-STATE

$1.7975

Yes

Obsolete

YES

CMOS

IT ALSO HAVE X1 MEMORY WIDTH

R-PBGA-B24

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, THIN PROFILE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

Infineon

108 MHz

8 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

TBGA

BGA24,5X5,40

SERIAL

3 V

1.2 mm

SPI

55 µA

30 nA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

$1.8396

Yes

Active

YES

CMOS

IT IS ALSO CONFIGURED AS 64M X 1

S-PDSO-N8

85 °C

-40 °C

260

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

800 µm

DUAL

INFINEON TECHNOLOGIES AG

compliant

Infineon

108 MHz

4 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

HVSON

SERIAL

3 V

600 µm

3.6 V

2.7 V

3 V

INDUSTRIAL

4 mm

3-STATE

1 2 3 4 5 Next

Compare

SS25FA

onsemi

$0.1611

Yes

Active

2 A

700 mV

9 ns

400 µA

SILICON

RECTIFIER DIODE

SINGLE

YES

50 V

SCHOTTKY

LOW POWER LOSS

EFFICIENCY

50 A

50 V

R-PDSO-F2

AEC-Q101

150 °C

-55 °C

260

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

FLAT

DUAL

ONSEMI

425AB

not_compliant

EAR99

8541.10.00.80

onsemi

S25FL208K0RMFI013

Cypress Semiconductor

$0.9967

Yes

Obsolete

YES

CMOS

Not Qualified

S-PDSO-G8

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

GULL WING

1.27 mm

DUAL

CYPRESS SEMICONDUCTOR CORP

compliant

EAR99

8542.32.00.51

SOIC-8

76 MHz

100000 Write/Erase Cycles

5.283 mm

8.3886 Mbit

FLASH

1.0486 M

1000000

SYNCHRONOUS

1MX8

SOP

SOP8,.3

SERIAL

3 V

2.159 mm

SPI

32 µA

25 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

5.283 mm

HARDWARE/SOFTWARE

S25FL256LDPNFB010

Infineon Technologies AG

$1.0000

Yes

Active

YES

CMOS

R-PDSO-N8

105 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

1.27 mm

DUAL

INFINEON TECHNOLOGIES AG

compliant

WSON-8

66 MHz

100000 Write/Erase Cycles

6 mm

268.4355 Mbit

FLASH

33.5544 M

32000000

SYNCHRONOUS

32MX8

HVQCCN

SOLCC8,.25

SERIAL

3 V

800 µm

SPI

60 µA

50 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

S25FL256LDPNFB013

Infineon Technologies AG

$1.0000

Yes

Active

YES

CMOS

R-PDSO-N8

105 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

1.27 mm

DUAL

INFINEON TECHNOLOGIES AG

compliant

WSON-8

66 MHz

100000 Write/Erase Cycles

6 mm

268.4355 Mbit

FLASH

33.5544 M

32000000

SYNCHRONOUS

32MX8

HVQCCN

SOLCC8,.25

SERIAL

3 V

800 µm

SPI

60 µA

50 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

S25FL512SAGBHMA13

Infineon Technologies AG

$1.0000

Yes

Active

YES

CMOS

R-PBGA-B24

125 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, THIN PROFILE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

BGA-24

133 MHz

100000 Write/Erase Cycles

8 mm

512.7537 Mbit

FLASH

64.0942 M

64000000

SYNCHRONOUS

64MX8

TBGA

BGA24,5X5,40

SERIAL

3 V

1.2 mm

SPI

300 µA

100 µA

3.6 V

2.7 V

3 V

AUTOMOTIVE

NOR TYPE

6 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

S25FL512SAGBHMA10

Infineon Technologies AG

$1.0000

Yes

Active

YES

CMOS

R-PBGA-B24

125 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, THIN PROFILE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

Infineon

BGA-24

133 MHz

100000 Write/Erase Cycles

8 mm

512.7537 Mbit

FLASH

64.0942 M

64000000

SYNCHRONOUS

64MX8

TBGA

BGA24,5X5,40

SERIAL

3 V

1.2 mm

SPI

300 µA

100 µA

3.6 V

2.7 V

3 V

AUTOMOTIVE

NOR TYPE

6 mm

HARDWARE/SOFTWARE

3-STATE

AEC-Q100

S25FL064LABNFA010

Infineon Technologies AG

$1.6044

Yes

Active

YES

CMOS

IT ALSO HAVE X1 MEMORY WIDTH

S-PDSO-N8

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

800 µm

DUAL

INFINEON TECHNOLOGIES AG

compliant

Infineon

108 MHz

4 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

HVSON

SERIAL

3 V

600 µm

3.6 V

2.7 V

3 V

INDUSTRIAL

4 mm

3-STATE

AEC-Q100

S25FL064P0XBHV020

Cypress Semiconductor

$1.7745

Yes

Obsolete

YES

CMOS

Not Qualified

R-PBGA-B24

105 °C

-40 °C

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

BALL

1.2 mm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

EAR99

8542.32.00.51

BGA-24

104 MHz

100000 Write/Erase Cycles

8 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

VBGA

BGA24,5X5,40

SERIAL

3 V

1 mm

QSPI

10 µA

38 µA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

3-STATE

S25FL064LABBHI030

Infineon Technologies AG

$1.7975

Yes

Obsolete

YES

CMOS

IT ALSO HAVE X1 MEMORY WIDTH

R-PBGA-B24

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY, THIN PROFILE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

Infineon

108 MHz

8 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

TBGA

BGA24,5X5,40

SERIAL

3 V

1.2 mm

SPI

55 µA

30 nA

3.6 V

2.7 V

3 V

INDUSTRIAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

S25FL064LABNFI043

Infineon Technologies AG

$1.8396

Yes

Active

YES

CMOS

IT IS ALSO CONFIGURED AS 64M X 1

S-PDSO-N8

85 °C

-40 °C

260

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Matte Tin (Sn)

NO LEAD

800 µm

DUAL

INFINEON TECHNOLOGIES AG

compliant

Infineon

108 MHz

4 mm

67.1089 Mbit

FLASH

8.3886 M

8000000

SYNCHRONOUS

8MX8

HVSON

SERIAL

3 V

600 µm

3.6 V

2.7 V

3 V

INDUSTRIAL

4 mm

3-STATE

1 2 3 4 5 Next