Parametric results for: s29gl01gs11dhav20 under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Common Flash Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

110 ns 2

2 hits Apply

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES 1

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1 1

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BOTTOM/TOP 1

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YES 1

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YES 1

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YES 1

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2 1

2 hits Apply

100000.0 Write/Erase Cycles 1

2 hits Apply

S-PBGA-B64 2

2 hits Apply

e1 2

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9 mm 2

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Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

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Memory Density (1)

1.0737 Gbit 2

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FLASH 2

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Memory Width (1)

8 2

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3 2

2 hits Apply

1.0 2

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1K 1

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64 2

2 hits Apply

134.2177 M 2

2 hits Apply

1.28E8 2

2 hits Apply

ASYNCHRONOUS 2

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85.0 °C 2

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-40.0 °C 2

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Organization (1)

128MX8 2

2 hits Apply

3-STATE 1

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PLASTIC/EPOXY 2

2 hits Apply

LBGA 2

2 hits Apply

BGA64,8X8,40 1

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SQUARE 2

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GRID ARRAY, LOW PROFILE 2

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32 words 1

2 hits Apply

Sector Size (1)

128K 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply