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1 - 10 of 289 results
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P6SMBJ10A
Diotec Semiconductor AG
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$0.0585 | Yes | Active | 17 V | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | 12.3 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -50 °C | 260 | 5 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | DIOTEC SEMICONDUCTOR AG | DO-214AA | SMB, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.50 | |||||||||||
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SMBJ10A-E3/52
Vishay Intertechnologies
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$0.0742 | Yes | Active | 3.5 V | 17 V | 5 µA | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED | 12.3 V | 600 W | 10 V | Not Qualified | R-PDSO-C2 | e3 | UL RECOGNIZED | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | C BEND | DUAL | VISHAY INTERTECHNOLOGY INC | SMB, 2 PIN | not_compliant | Vishay | |||||||||
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SMBJ10A-13-F
Diodes Incorporated
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$0.1611 | No | Yes | Active | 17 V | 5 W | 11.95 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY | 12.8 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | 1 | 150 °C | -55 °C | 260 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | DIODES INC | SMB, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.50 | Diodes Incorporated | SMB | ||||||||||
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SMBJ10A
Littelfuse Inc
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$0.1621 | No | Yes | Active | 3.5 V | 17 V | 5 µA | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY | 12.3 V | 600 W | 10 V | Not Qualified | R-PDSO-C2 | e3 | IEC-61000-4-2, 4-4; UL RECOGNIZED | DO-214AA | 1 | 150 °C | -65 °C | 260 | 40 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | LITTELFUSE INC | SMB, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | LITTELFUSE | ||||||
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SMBJ10A/TR13
YAGEO Corporation
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$0.1659 | Yes | Active | 17 V | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN, UL CERTIFIED | 12.3 V | 600 W | R-PDSO-C2 | e3 | UL CERTIFIED | DO-214AA | 1 | 150 °C | -65 °C | 260 | 40 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | C BEND | DUAL | YAGEO CORP | R-PDSO-C2 | compliant | EAR99 | 8541.10.00.50 | 2019-04-29 | |||||||||||
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SMBJ10A-QH
Bourns Inc
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$0.1970 | Yes | Active | 17 V | 5 µA | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | PRSM-MIN | 12.3 V | 600 W | 10 V | R-PDSO-C2 | e3 | AEC-Q101; UL RECOGNIZED | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | BOURNS INC | SMB, 2 PIN | unknown | |||||||||||||
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SMBJ10A
Taiwan Semiconductor
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$0.2155 | Yes | Active | 3.5 V | 17 V | 5 µA | 3 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | EXCELLENT CLAMPING CAPABILITY | 12.3 V | 600 W | 10 V | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | TAIWAN SEMICONDUCTOR CO LTD | SMB, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | Taiwan Semiconductor | ||||||||
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SMBJ10A-TR
STMicroelectronics
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$0.2401 | Yes | Active | 21.7 V | 5 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | 4 kW | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | STMICROELECTRONICS | DO-214AA | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.50 | STMicroelectronics | |||||||||||
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SMBJ10AE3/TR13
Microchip Technology Inc
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$0.2920 | Yes | Active | 17 V | 1.38 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | TR, 7 INCH: 750 | 12.3 V | 600 W | R-PDSO-C2 | e3 | IEC-61000-4-2, 4-4, 4-5 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROCHIP TECHNOLOGY INC | SMBJ, 2 PIN | compliant | ||||||||||||||
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MSMBJ10AE3
Microchip Technology Inc
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$1.1300 | Yes | Active | 1.38 W | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | HIGH RELIABILITY | 12.3 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant |